Abstracts
A ferroelectric/multiferroic structure composed of (Pb0.9Sr0.1)TiO3 (PST) and (Bi0.9La0.1)FeO3 (BLF) was heteroepitaxially deposited on a LaNiO3 buffered (001) SrTiO3 substrate by pulse laser deposition. Interestingly, the PST layer was acting as a buffering layer between BLF and electrode to suppress the migration of free carries in the heterostructure. A well-grown crystalline dense structure was observed from the surface morphology of PST/BLF/PST heterostructure. Moreover, the PST/BLF/PST trilayer exhibited improved ferroelectric and dielectric behaviors, together with two orders of magnitude lower leakage current and higher dielectric constant. Our result indicate that the multiferroic PST/BLF/PST heterostructure may have a promising application for the future high-density memory.
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Acknowledgments
This work was supported by the National Basic Research Program of China (Grant Nos. 2015CB921502, 2012CB932702), the National Science Foundation of China (Grant Nos. 11574027, 51371024, 51325101), NCET13-0665, the Fundamental Research Funds for the Central Universities.
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Liu, Q., Miao, J., Shao, F. et al. Heteroepitaxial Pb0.9Sr0.1TiO3/Bi0.9La0.1FeO3/Pb0.9Sr0.1TiO3 multiferroic structure: an effective way to improve the electrical, ferroelectric and magnetic performance. J Mater Sci: Mater Electron 27, 8080–8086 (2016). https://doi.org/10.1007/s10854-016-4807-8
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DOI: https://doi.org/10.1007/s10854-016-4807-8