Abstract
The influence of hydrogenated annealing temperature on the room temperature ferromagnetism of Mn-doped ZnO films was investigated. The X-ray diffraction and X-ray photoelectron spectra reveal Mn2+ ions have been incorporated into wurtzite ZnO lattices. The saturation magnetization increases quickly with the increasing N2/H2-annealing temperature (Tan) until the temperature reaches 750 °C, and then the saturation magnetization approaches a constant value. Some foamlike materials appear in the non-continuous films when the Tan is 640 °C or above, and saturation magnetization of these films become stronger than that of the (600–630 °C) annealed films. The results of X-ray photoelectron spectra, SEM images and photoluminescence spectrum suggest that oxygen vacancy concentration of the annealed films increases with increasing Tan, which leads to the ferromagnetism of the Mn-doped ZnO film. These results demonstrate that oxygen vacancies, especially singly ionized oxygen vacancies, play a crucial role in mediating ferromagnetism of the Mn-doped ZnO film.
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P. Sharma, K. Sreenivas, K.V. Rao, J. Appl. Phys. 93, 3963 (2003)
S. Banerjee, M. Mandal, N. Gayathri, M. Sardar, Appl. Phys. Lett. 91, 182501 (2007)
S.A. Wolf, Science 294, 1488–1495 (2001)
R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, L.W. Molenkamp, Nature 402, 787 (1999)
Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno, D.D. Awschalom, Nature 402, 790 (1999)
T. Dietl, Science 287, 1019–1022 (2000)
Y.M. Chiang, D.P.I. Birnie, W.D. Kingery, Phys. Ceramics, John Wiley & Sons, Inc (1997)
T. Fukumura, Z.W. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys. Lett. 75, 3366 (1999)
P. Sharma, A. Gupta, K.V. Rao, F.J. Owens, R. Sharma, R. Ahuja, J.M.O. Guillen, B. Johansson, G.A. Gehring, Nat. Mater. 2, 673–677 (2003)
S. Ramachandran, J. Narayan, J.T. Prater, Appl. Phys. Lett. 88, 242503 (2006)
W. Chen, L.F. Zhao, Y.Q. Wang, J.H. Miao, S. Liu, Z.C. Xia, S.L. Yuan, Appl. Phys. Lett. 87, 042507 (2005)
P. Gopal, N.A. Spaldin, Phys. Rev. B 74, 094418 (2006)
A. Mahmoud, H. von Bardeleben, J. Cantin, A. Mauger, E. Chikoidze, Y. Dumont, Phys. Rev. B 74, 115203 (2006)
B. Lu, L.Q. Zhang, Y.H. Lu, Z.Z. Ye, J.G. Lu, X.H. Pan, J.Y. Huang, Appl. Phys. Lett. 101, 242401 (2012)
Q.Q. Gao, Q.X. Yu, K. Yuan, X.N. Fu, B. Chen, C.X. Zhu, H. Zhu, Appl. Surf. Sci. 264, 7–10 (2013)
V.K. Sharma, G.D. Varma, J. Appl. Phys. 102, 056105 (2007)
H.B. Ruan, C.Y. Kong, G.P. Qin, W.J. Li, T.Y. Yang, F. Wu, L. Fang, J. Magn. Magn. Mater. 369, 219–222 (2014)
D. Toloman, A. Mesaros, A. Popa, O. Raita, T.D. Silipas, B.S. Vasile, O. Pana, L.M. Giurgiu, J. Alloys Compd. 551, 502–507 (2013)
W.J. Liu, X.D. Tang, Z. Tang, J. Appl. Phys. 114, 123911 (2013)
Z.H. Wang, D.Y. Geng, S. Guo, W.J. Hu, Z.D. Zhang, Appl. Phys. Lett. 92, 242505 (2008)
T. Li, C.S. Ong, T.S. Herng, J.B. Yi, N.N. Bao, J.M. Xue, Y.P. Feng, J. Ding, Appl. Phys. Lett. 98, 152505 (2011)
Y. Fukuma, F. Odawara, H. Asada, T. Koyanagi, Phys. Rev. B 78, 104417 (2008)
K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79, 988 (2001)
Y.X. Wang, H. Liu, Z.Q. Li, X.X. Zhang, R.K. Zheng, S.P. Ringer, Appl. Phys. Lett. 89, 042511 (2006)
S.J. Lee, C.S. Hwang, J.E. Pi, J.H. Yang, H. Oh, S.H. Cho, K.I. Cho, H.Y. Chu, Appl. Phys. Lett. 105, 201601 (2014)
R. Martins, P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, Phys. Stat. Sol. (a) 202, R95–R97 (2005)
Z.H. Wang, D.Y. Geng, Z.D. Zhang, Solid State Commun. 149, 682–684 (2009)
C.G. Jin, T. Yu, Z.F. Wu, X.M. Chen, X.M. Wu, L.J. Zhuge, Appl. Phys. A 109, 173–179 (2012)
Q.Q. Gao, Q.X. Yu, B. Chen, H. Zhu, J. Alloys Compd. 590, 446–452 (2014)
S. Brahma, K.Y. Lo, S.A. Shivashankar, Mater. Lett. 140, 177–179 (2015)
H. Gu, W. Zhang, Y. Xu, M. Yan, Appl. Phys. Lett. 100, 202401 (2012)
C. Liu, F. Yun, H. Morkoc, J. Mater. Sci. Mater. Electron. 16, 555–597 (2005)
T.L. Phan, S.C. Yu, J. Phys. Chem. C 117, 6443–6453 (2013)
W.B. Mi, H.L. Bai, H. Liu, C.Q. Sun, J. Appl. Phys. 101, 023904 (2007)
H.Y. Xu, Y.C. Liu, C.S. Xu, Y.X. Liu, C.L. Shao, R. Mu, Appl. Phys. Lett. 88, 242502 (2006)
Z. Zuo, H. Zhou, M.J. Olmedo, J. Kong, W.P. Beyermann, J.G. Zheng, Y. Xin, J. Liu, J. Appl. Phys. 112, 053708 (2012)
D. Gao, J. Zhang, G. Yang, J. Zhang, Z. Shi, J. Qi, Z. Zhang, D. Xue, J. Phys. Chem. C 114, 13477–13481 (2010)
X. Xu, C. Xu, J. Dai, J. Hu, F. Li, S. Zhang, J. Phys. Chem. C 116, 8813–8818 (2012)
G. Wang, H. Wang, Y. Ling, Y. Tang, X. Yang, R.C. Fitzmorris, C. Wang, J.Z. Zhang, Y. Li, Nano Lett. 11, 3026–3033 (2011)
U. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
W. Shan, W. Walukiewicz, J.W. Ager, K.M. Yu, H.B. Yuan, H.P. Xin, G. Cantwell, J.J. Song, Appl. Phys. Lett. 86, 191911 (2005)
B. Panigrahy, M. Aslam, D.S. Misra, M. Ghosh, D. Bahadur, Adv. Funct. Mater. 20, 1161–1165 (2010)
S.H. Jeong, B.S. Kim, B.T. Lee, Appl. Phys. Lett. 82, 2625 (2003)
K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade, J. Appl. Phys. 79, 7983 (1996)
S.K. Chaudhuri, M. Ghosh, D. Das, A.K. Raychaudhuri, J. Appl. Phys. 108, 064319 (2010)
S. Vempati, S. Chirakkara, J. Mitra, P. Dawson, K. Kar Nanda, S.B. Krupanidhi, Appl. Phys. Lett. 100, 162104 (2012)
Z.L. Lu, H.S. Hsu, Y.H. Tzeng, F.M. Zhang, Y.W. Du, J.C.A. Huang, Appl. Phys. Lett. 95, 102501 (2009)
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This work was supported in part by the Anhui Provincial Natural Science Foundation under Grant 1408085ME91.
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Gao, Q., Dai, Y., Yu, Q. et al. Defect-induced structural and ferromagnetic properties of hydrogenated Mn-doped ZnO film. J Mater Sci: Mater Electron 27, 697–704 (2016). https://doi.org/10.1007/s10854-015-3805-6
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DOI: https://doi.org/10.1007/s10854-015-3805-6