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Defect-induced structural and ferromagnetic properties of hydrogenated Mn-doped ZnO film

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Abstract

The influence of hydrogenated annealing temperature on the room temperature ferromagnetism of Mn-doped ZnO films was investigated. The X-ray diffraction and X-ray photoelectron spectra reveal Mn2+ ions have been incorporated into wurtzite ZnO lattices. The saturation magnetization increases quickly with the increasing N2/H2-annealing temperature (Tan) until the temperature reaches 750 °C, and then the saturation magnetization approaches a constant value. Some foamlike materials appear in the non-continuous films when the Tan is 640 °C or above, and saturation magnetization of these films become stronger than that of the (600–630 °C) annealed films. The results of X-ray photoelectron spectra, SEM images and photoluminescence spectrum suggest that oxygen vacancy concentration of the annealed films increases with increasing Tan, which leads to the ferromagnetism of the Mn-doped ZnO film. These results demonstrate that oxygen vacancies, especially singly ionized oxygen vacancies, play a crucial role in mediating ferromagnetism of the Mn-doped ZnO film.

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References

  1. P. Sharma, K. Sreenivas, K.V. Rao, J. Appl. Phys. 93, 3963 (2003)

    Article  Google Scholar 

  2. S. Banerjee, M. Mandal, N. Gayathri, M. Sardar, Appl. Phys. Lett. 91, 182501 (2007)

    Article  Google Scholar 

  3. S.A. Wolf, Science 294, 1488–1495 (2001)

    Article  Google Scholar 

  4. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, L.W. Molenkamp, Nature 402, 787 (1999)

    Article  Google Scholar 

  5. Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno, D.D. Awschalom, Nature 402, 790 (1999)

    Article  Google Scholar 

  6. T. Dietl, Science 287, 1019–1022 (2000)

    Article  Google Scholar 

  7. Y.M. Chiang, D.P.I. Birnie, W.D. Kingery, Phys. Ceramics, John Wiley & Sons, Inc (1997)

  8. T. Fukumura, Z.W. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys. Lett. 75, 3366 (1999)

    Article  Google Scholar 

  9. P. Sharma, A. Gupta, K.V. Rao, F.J. Owens, R. Sharma, R. Ahuja, J.M.O. Guillen, B. Johansson, G.A. Gehring, Nat. Mater. 2, 673–677 (2003)

    Article  Google Scholar 

  10. S. Ramachandran, J. Narayan, J.T. Prater, Appl. Phys. Lett. 88, 242503 (2006)

    Article  Google Scholar 

  11. W. Chen, L.F. Zhao, Y.Q. Wang, J.H. Miao, S. Liu, Z.C. Xia, S.L. Yuan, Appl. Phys. Lett. 87, 042507 (2005)

    Article  Google Scholar 

  12. P. Gopal, N.A. Spaldin, Phys. Rev. B 74, 094418 (2006)

    Article  Google Scholar 

  13. A. Mahmoud, H. von Bardeleben, J. Cantin, A. Mauger, E. Chikoidze, Y. Dumont, Phys. Rev. B 74, 115203 (2006)

    Article  Google Scholar 

  14. B. Lu, L.Q. Zhang, Y.H. Lu, Z.Z. Ye, J.G. Lu, X.H. Pan, J.Y. Huang, Appl. Phys. Lett. 101, 242401 (2012)

    Article  Google Scholar 

  15. Q.Q. Gao, Q.X. Yu, K. Yuan, X.N. Fu, B. Chen, C.X. Zhu, H. Zhu, Appl. Surf. Sci. 264, 7–10 (2013)

    Article  Google Scholar 

  16. V.K. Sharma, G.D. Varma, J. Appl. Phys. 102, 056105 (2007)

    Article  Google Scholar 

  17. H.B. Ruan, C.Y. Kong, G.P. Qin, W.J. Li, T.Y. Yang, F. Wu, L. Fang, J. Magn. Magn. Mater. 369, 219–222 (2014)

    Article  Google Scholar 

  18. D. Toloman, A. Mesaros, A. Popa, O. Raita, T.D. Silipas, B.S. Vasile, O. Pana, L.M. Giurgiu, J. Alloys Compd. 551, 502–507 (2013)

    Article  Google Scholar 

  19. W.J. Liu, X.D. Tang, Z. Tang, J. Appl. Phys. 114, 123911 (2013)

    Article  Google Scholar 

  20. Z.H. Wang, D.Y. Geng, S. Guo, W.J. Hu, Z.D. Zhang, Appl. Phys. Lett. 92, 242505 (2008)

    Article  Google Scholar 

  21. T. Li, C.S. Ong, T.S. Herng, J.B. Yi, N.N. Bao, J.M. Xue, Y.P. Feng, J. Ding, Appl. Phys. Lett. 98, 152505 (2011)

    Article  Google Scholar 

  22. Y. Fukuma, F. Odawara, H. Asada, T. Koyanagi, Phys. Rev. B 78, 104417 (2008)

    Article  Google Scholar 

  23. K. Ueda, H. Tabata, T. Kawai, Appl. Phys. Lett. 79, 988 (2001)

    Article  Google Scholar 

  24. Y.X. Wang, H. Liu, Z.Q. Li, X.X. Zhang, R.K. Zheng, S.P. Ringer, Appl. Phys. Lett. 89, 042511 (2006)

    Article  Google Scholar 

  25. S.J. Lee, C.S. Hwang, J.E. Pi, J.H. Yang, H. Oh, S.H. Cho, K.I. Cho, H.Y. Chu, Appl. Phys. Lett. 105, 201601 (2014)

    Article  Google Scholar 

  26. R. Martins, P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, Phys. Stat. Sol. (a) 202, R95–R97 (2005)

    Article  Google Scholar 

  27. Z.H. Wang, D.Y. Geng, Z.D. Zhang, Solid State Commun. 149, 682–684 (2009)

    Article  Google Scholar 

  28. C.G. Jin, T. Yu, Z.F. Wu, X.M. Chen, X.M. Wu, L.J. Zhuge, Appl. Phys. A 109, 173–179 (2012)

    Article  Google Scholar 

  29. Q.Q. Gao, Q.X. Yu, B. Chen, H. Zhu, J. Alloys Compd. 590, 446–452 (2014)

    Article  Google Scholar 

  30. S. Brahma, K.Y. Lo, S.A. Shivashankar, Mater. Lett. 140, 177–179 (2015)

    Article  Google Scholar 

  31. H. Gu, W. Zhang, Y. Xu, M. Yan, Appl. Phys. Lett. 100, 202401 (2012)

    Article  Google Scholar 

  32. C. Liu, F. Yun, H. Morkoc, J. Mater. Sci. Mater. Electron. 16, 555–597 (2005)

    Article  Google Scholar 

  33. T.L. Phan, S.C. Yu, J. Phys. Chem. C 117, 6443–6453 (2013)

    Article  Google Scholar 

  34. W.B. Mi, H.L. Bai, H. Liu, C.Q. Sun, J. Appl. Phys. 101, 023904 (2007)

    Article  Google Scholar 

  35. H.Y. Xu, Y.C. Liu, C.S. Xu, Y.X. Liu, C.L. Shao, R. Mu, Appl. Phys. Lett. 88, 242502 (2006)

    Article  Google Scholar 

  36. Z. Zuo, H. Zhou, M.J. Olmedo, J. Kong, W.P. Beyermann, J.G. Zheng, Y. Xin, J. Liu, J. Appl. Phys. 112, 053708 (2012)

    Article  Google Scholar 

  37. D. Gao, J. Zhang, G. Yang, J. Zhang, Z. Shi, J. Qi, Z. Zhang, D. Xue, J. Phys. Chem. C 114, 13477–13481 (2010)

    Article  Google Scholar 

  38. X. Xu, C. Xu, J. Dai, J. Hu, F. Li, S. Zhang, J. Phys. Chem. C 116, 8813–8818 (2012)

    Article  Google Scholar 

  39. G. Wang, H. Wang, Y. Ling, Y. Tang, X. Yang, R.C. Fitzmorris, C. Wang, J.Z. Zhang, Y. Li, Nano Lett. 11, 3026–3033 (2011)

    Article  Google Scholar 

  40. U. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)

    Article  Google Scholar 

  41. W. Shan, W. Walukiewicz, J.W. Ager, K.M. Yu, H.B. Yuan, H.P. Xin, G. Cantwell, J.J. Song, Appl. Phys. Lett. 86, 191911 (2005)

    Article  Google Scholar 

  42. B. Panigrahy, M. Aslam, D.S. Misra, M. Ghosh, D. Bahadur, Adv. Funct. Mater. 20, 1161–1165 (2010)

    Article  Google Scholar 

  43. S.H. Jeong, B.S. Kim, B.T. Lee, Appl. Phys. Lett. 82, 2625 (2003)

    Article  Google Scholar 

  44. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, B.E. Gnade, J. Appl. Phys. 79, 7983 (1996)

    Article  Google Scholar 

  45. S.K. Chaudhuri, M. Ghosh, D. Das, A.K. Raychaudhuri, J. Appl. Phys. 108, 064319 (2010)

    Article  Google Scholar 

  46. S. Vempati, S. Chirakkara, J. Mitra, P. Dawson, K. Kar Nanda, S.B. Krupanidhi, Appl. Phys. Lett. 100, 162104 (2012)

    Article  Google Scholar 

  47. Z.L. Lu, H.S. Hsu, Y.H. Tzeng, F.M. Zhang, Y.W. Du, J.C.A. Huang, Appl. Phys. Lett. 95, 102501 (2009)

    Article  Google Scholar 

Download references

Acknowledgment

This work was supported in part by the Anhui Provincial Natural Science Foundation under Grant 1408085ME91.

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Correspondence to Qianqian Gao or Qingxuan Yu.

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Gao, Q., Dai, Y., Yu, Q. et al. Defect-induced structural and ferromagnetic properties of hydrogenated Mn-doped ZnO film. J Mater Sci: Mater Electron 27, 697–704 (2016). https://doi.org/10.1007/s10854-015-3805-6

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  • DOI: https://doi.org/10.1007/s10854-015-3805-6

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