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Preparation of ScAlN films as a function of power density on Si and flexible substrate by dc reactive magnetron sputtering

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Abstract

Sc doped AlN (ScAlN) films were prepared by DC reactive magnetron sputtering. The crystal quality, the resistivity and the leakage current of ScAlN thin films grown on Si (100) and C276 alloy substrates at various power density from 1.16 to 2.10 W cm−2 have been investigated. According to the research, the crystal quality of ScAlN film first increases and then decreases, reaching the best crystalline state at 1.58 and 1.79 W cm−2 prepared on Si and alloy substrate respectively. The resistivity first increases to a maximum value of 3.71 × 1012 and 3.50 × 1012 Ω cm, respectively, and then decreased with the power density increasing. The minimum value of leakage current are 0.25 × 10−8 and 0.32 × 10−8 A, respectively.

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Acknowledgments

This article is supported by Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China.

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Authors and Affiliations

  1. University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China

    Xiaomei Li, Yixi Yang, Dong Zhou, Chengtao Yang, Fan Feng, Junsong Yang & Qijun Hu

  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, 610000, China

    Xiaomei Li, Yixi Yang, Dong Zhou, Chengtao Yang, Fan Feng, Junsong Yang & Qijun Hu

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  1. Xiaomei Li
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Correspondence to Yixi Yang.

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Li, X., Yang, Y., Zhou, D. et al. Preparation of ScAlN films as a function of power density on Si and flexible substrate by dc reactive magnetron sputtering. J Mater Sci: Mater Electron 27, 171–176 (2016). https://doi.org/10.1007/s10854-015-3733-5

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  • DOI: https://doi.org/10.1007/s10854-015-3733-5

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