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Preparation and properties of transparent conductive N-doped CuAlO2 films using N2O as the N source

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Abstract

N-doped CuAlO2 films were prepared by RF magnetron sputtering on quartz substrates using N2O as the N source. N concentration in the films is detected by Auger electron spectroscopy in detail, which confirms that N is indeed incorporated into the films. The optical and electrical properties of transparent conductive N-doped CuAlO2 films are modulated by the N2O flow ratio in sputtering gas. The N-doped films have a visible transmittance of 60–70 % and a high infrared transmittance of ~85 %. The film deposited by using 15 % N2O flow ratio with the optimal crystalline is provided with a conductivity of 3.75 × 10−2 S cm−1 at room temperature, which improves over one order of magnitude compared with the undoped film. The enhanced conductive property is mainly originated from the ionization of acceptor impurities.

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Acknowledgments

We greatly acknowledge the financial support obtained from the National Natural Science Foundation of China (No. 61006001 and 61176005), and the Natural Science Foundation of Gansu Province (No. 1208RJZA199), Beijing research program (No. D121100001812002) and the Project-sponsored by SRF for ROCS, SEM.

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Authors and Affiliations

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People’s Republic of China

    Jiaqi Pan, Wei Lan, Yingzhuo Sheng, Boxue Feng, Xin Zhang & Erqing Xie

  2. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, 730000, People’s Republic of China

    Jiaqi Pan, Wei Lan, Yingzhuo Sheng, Boxue Feng, Xin Zhang & Erqing Xie

  3. Institute of North Electronic Equipment, Beijing, 100083, People’s Republic of China

    Hongquan Liu

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  1. Jiaqi Pan
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  2. Wei Lan
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  3. Hongquan Liu
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  4. Yingzhuo Sheng
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  5. Boxue Feng
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  6. Xin Zhang
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Correspondence to Wei Lan.

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Pan, J., Lan, W., Liu, H. et al. Preparation and properties of transparent conductive N-doped CuAlO2 films using N2O as the N source. J Mater Sci: Mater Electron 25, 4004–4007 (2014). https://doi.org/10.1007/s10854-014-2121-x

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  • DOI: https://doi.org/10.1007/s10854-014-2121-x

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