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Structural and electrical properties of V-doped ZnO prepared by the solid state reaction

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Abstract

This paper reports the synthesis, crystal structure and electrical conductivity properties of vanadium (V)-doped zinc oxide (ZnO) powders (i.e. Zn1−2X V X O binary system, x = 0, 0.0025, 0.005, 0.0075 and in the range 0.01 ≤ x ≤ 0.15). I-phase samples, which were indexed as single phase with a hexagonal (wurtzite) structure in the V-doped ZnO binary system, were determined by X-ray diffraction (XRD). The limit solubility of V in the ZnO lattice at this temperature is 3 mol % at 950 °C. The impurity phase at 950 °C was determined as ZnV2O6 when compared with standart XRD data. The research focused on single I-phase ZnO samples which were synthesized at 950 °C because of the limit of the solubility range is widest at this temperature. It was observed that the lattice parameters a and c decreased with V doping concentration. The electrical conductivity of the pure ZnO and single I-phase samples were studied using the four-point probe dc method at temperatures between 100 and 950 °C in an air atmosphere. The electrical conductivity values of pure ZnO and 3 mol % V-doped ZnO samples at 100 °C were 2.75 × 10−6 and 7.94 × 10−5 Ω−1 cm−1, and at 950 °C they were 3.4 and 54.95 Ω−1 cm−1, respectively. In other words, the electrical conductivity increased with V doping concentration.

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Acknowledgments

This study was financially supported by the Research Foundation of Erciyes University (Kayseri, Turkey).

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Authors and Affiliations

  1. Department of Chemistry, Faculty of Science, Çankırı Karatekin University, Ballıca Campus, 18200, Çankırı, Turkey

    Hakan Çolak

  2. Department of Chemistry, Faculty of Science, Erciyes University, 38039, Kayseri, Turkey

    Orhan Türkoğlu

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  1. Hakan Çolak
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Correspondence to Hakan Çolak.

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Çolak, H., Türkoğlu, O. Structural and electrical properties of V-doped ZnO prepared by the solid state reaction. J Mater Sci: Mater Electron 23, 1750–1758 (2012). https://doi.org/10.1007/s10854-012-0657-1

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  • DOI: https://doi.org/10.1007/s10854-012-0657-1

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