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Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide

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Abstract

Delafossite-type CuCr1−x Zn x O2 (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr1−x Zn x O2 oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn2+ and Cr3+ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry.

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Acknowledgements

This work was supported in part by the National Natural Science Foundation of China (Nos. 11404129, 61307124), National Key Technology R&D Program (Nos. 2013BAK06B04, 2014BAD08B03), Science and Technology Department of Jilin Province (No. 20140307014SF), Changchun Municipal Science and Technology Bureau (Nos. 11GH01, 14KG022) and the State Key Laboratory of Integrated Optoelectronics, Jilin University (No. IOSKL2012ZZ12).

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China

    Ya-Hui Chuai, Xin Wang, Hong-Zhi Shen, Chuan-Tao Zheng & Yi-Ding Wang

  2. College of Physics, Jilin University, 2699 Qianjin Street, Changchun, 130012, People’s Republic of China

    Ya-Dan Li

  3. Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, TX, 77005, USA

    Chuan-Tao Zheng

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  1. Ya-Hui Chuai
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  2. Xin Wang
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Correspondence to Chuan-Tao Zheng or Yi-Ding Wang.

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Chuai, YH., Wang, X., Shen, HZ. et al. Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide. J Mater Sci 51, 3592–3599 (2016). https://doi.org/10.1007/s10853-015-9679-4

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  • DOI: https://doi.org/10.1007/s10853-015-9679-4

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