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Performance analysis of a substrate-engineered monolayer MoS2 field-effect transistor

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Abstract

We investigate the impact of different substrates on the performance of a monolayer MoS2 field-effect transistor (FET) by calculating the interface charge density between the MoS2 layer and the substrate using first-principle calculations based on density functional theory to provide details about the overlap of electron orbitals at the interface. The electrical characteristics of the monolayer MoS2 FET are determined by using the extracted interface charge density in numerical simulations. The electron transport behavior of the monolayer MoS2 FET is modeled using the nonequilibrium Green’s function with mode space (NEGF_MS) approach. We study and compare the performance of monolayer MoS2 FETs on different substrates, viz. SiO2, HfSiO4, Si3N4, HfO2, and h-BN. The results reveal that the monolayer MoS2 FET on the h-BN/Si substrate exhibits an on-current of 548 µA/µm and a subthreshold swing of 65 mV/dec.

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References

  1. Mak, K., Lee, C., Hone, J., Shan, J., Heinz, T.: Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010). https://doi.org/10.1103/PhysRevLett.105.136805

    Article  Google Scholar 

  2. Schwierz, F., Pezoldt, J., Granzner, R.: Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7, 8261–8283 (2015). https://doi.org/10.1039/C5NR01052G

    Article  Google Scholar 

  3. Pospischil, A., Mueller, T.: Optoelectronic devices based on atomically thin transition metal dichalcogenides. Appl. Sci. 6, 78 (2016). https://doi.org/10.3390/app6030078

    Article  Google Scholar 

  4. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, I.V., Kis, A.: Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147 (2011)

    Article  Google Scholar 

  5. Kim, J.H., Kim, T.H., Lee, H., Park, Y.R., Choi, W., Lee, C.J.: Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors. AIP Adv. 6, 2–7 (2016). https://doi.org/10.1063/1.4953809

    Google Scholar 

  6. Yoon, Y., Ganapathi, K., Salahuddin, S.: How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011). https://doi.org/10.1021/nl2018178

    Article  Google Scholar 

  7. Li, Z., Li, X., Yang, J.: Comparative study on electronic structures of Sc and Ti contacts with monolayer and multilayer MoS2. ACS Appl. Mater. Interfaces 7, 12981–12987 (2015). https://doi.org/10.1021/acsami.5b02782

    Article  Google Scholar 

  8. Divya Bharathi, N., Sivasankaran, K.: Influence of metal contact on the performance enhancement of monolayer MoS2 transistor. Superlattices Microstruct. 120, 479–486 (2018). https://doi.org/10.1016/j.spmi.2018.06.016

    Article  Google Scholar 

  9. Yuan, Z., Hou, J., Liu, K.: Interfacing 2D semiconductors with functional oxides: fundamentals, properties, and applications. Crystals 7, 265 (2017). https://doi.org/10.3390/cryst7090265

    Article  Google Scholar 

  10. Kc, S., Longo, R.C., Wallace, R.M., Cho, K.: Computational study of MoS2/HfO2 defective interfaces for nanometer-scale electronics. ACS Omega 2, 2827–2834 (2017). https://doi.org/10.1021/acsomega.7b00636

    Article  Google Scholar 

  11. Hu, Z., Prasad Sinha, D., Lee, J.U., Liehr, M.: Substrate dielectric effects on graphene field effect transistors. J. Appl. Phys. (2014). https://doi.org/10.1063/1.4879236

    Google Scholar 

  12. Ganapathi, K.L., Bhattacharjee, S., Mohan, S., Bhat, N.: High-performance HfO2 back gated multilayer MoS2 transistors. IEEE Electron Dev 37, 797–800 (2016)

    Google Scholar 

  13. Su, X., Cui, H., Ju, W., Yong, Y., Li, X.: First-principles investigation of MoS2 monolayer adsorbed on SiO2 (0001) surface. Mod. Phys. Lett. B 31, 1750229 (2017). https://doi.org/10.1142/S0217984917502293

    Article  Google Scholar 

  14. Liu, X., Chai, Y., Liu, Z.: Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates. Nanotechnology 28, 164004 (2017). https://doi.org/10.1088/1361-6528/aa610a

    Article  Google Scholar 

  15. Dev, D., Krishnaprasad, A., Kalita, H., Das, S., Rodriguez, V., Calderon Flores, J., Zhai, L., Roy, T.: High quality gate dielectric/MoS2 interfaces probed by the conductance method. Appl. Phys. Lett. 112, 232101 (2018). https://doi.org/10.1063/1.5028404

    Article  Google Scholar 

  16. Han, G., Yoon, Y.: Contact-dependent performance variability of monolayer MoS2 field-effect transistors. Appl. Phys. Lett. 105, 2–7 (2014). https://doi.org/10.1063/1.4902866

    Google Scholar 

  17. Wang, J., Cheng, Z., Chen, Z., Xu, J.B., Tsang, H.K., Shu, C.: Graphene photodetector integrated on silicon nitride waveguide. J. Appl. Phys. 117, 1–6 (2015). https://doi.org/10.1063/1.4917378

    Google Scholar 

  18. ATK: Atomistix toolkit manual (ATK), https://quantumwise.com/

  19. Pack, J.D., Monkhorst, H.J.: “Special points for Brillouin-zone integrations”—a reply. Phys. Rev. B. 16, 1748–1749 (1977). https://doi.org/10.1103/PhysRevB.16.1748

    Article  Google Scholar 

  20. Jin, Z., Li, X., Mullen, J.T., Kim, K.W.: Intrinsic transport properties of electrons and holes in monolayer transition metal dichalcogenides. Phys. Rev. B 90, 045422 (2014). https://doi.org/10.1103/PhysRevB.90.045422

    Article  Google Scholar 

  21. Kang, J., Tongay, S., Zhou, J., Li, J., Wu, J.: Band offsets and heterostructures of two-dimensional semiconductors. Appl. Phys. Lett. (2013). https://doi.org/10.1063/1.4774090

    Google Scholar 

  22. Kumar, A., Ahluwalia, P.K.: Tunable dielectric response of transition metals dichalcogenides MX2 (M = Mo, W; X = S, Se, Te): effect of quantum confinement. Phys. B Condens. Matter. 407, 4627–4634 (2012). https://doi.org/10.1016/j.physb.2012.08.034

    Article  Google Scholar 

  23. Wickramaratne, D., Zahid, F., Lake, R.K.: Electronic and thermoelectric properties of few-layer transition metal dichalcogenides. J. Chem. Phys. (2014). https://doi.org/10.1063/1.4869142

    Google Scholar 

  24. SILVACO: Silvaco, www.silvaco.com

  25. Sengupta, A., Ghosh, R.K., Mahapatra, S.: Performance analysis of strained monolayer MoS2 MOSFET. IEEE Trans. Electron Devices 60, 2782–2787 (2013). https://doi.org/10.1109/TED.2013.2273456

    Article  Google Scholar 

  26. Huang, X., Liu, W., Zhang, A., Zhang, Y., Wang, Z.: Ballistic transport in single-layer MoS2 piezotronic transistors. Nano Res. 9, 282–290 (2016). https://doi.org/10.1007/s12274-015-0908-6

    Article  Google Scholar 

  27. Khan, S.U.Z., Khosru, Q.D.M.: Quantum mechanical electrostatics and transport simulation and performance evaluation of short channel monolayer WSe2 field effect transistor. ECS Trans. 66, 11–18 (2015). https://doi.org/10.4208/cicc.2014.v2.n1.3

    Article  Google Scholar 

  28. Tiwari, D.L., Sivasankaran, K.: Impact of substrate on performance of band gap engineered graphene field effect transistor. Superlattices Microstruct. 113, 244–254 (2018). https://doi.org/10.1016/j.spmi.2017.11.004

    Article  Google Scholar 

  29. Naderi, A.: Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions. J. Comput. Electron. 15, 347–357 (2016). https://doi.org/10.1007/s10825-015-0781-2

    Article  Google Scholar 

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Acknowledgements

This work is supported by SERB (DST), Government of India grant no. ECR/2017/000220.

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  1. School of Electronics Engineering, Vellore Institute of Technology, Vellore, India

    N. Divya Bharathi & K. Sivasankaran

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  1. N. Divya Bharathi
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  2. K. Sivasankaran
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Correspondence to K. Sivasankaran.

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Divya Bharathi, N., Sivasankaran, K. Performance analysis of a substrate-engineered monolayer MoS2 field-effect transistor. J Comput Electron 18, 146–154 (2019). https://doi.org/10.1007/s10825-018-1282-x

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