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Optoelectronic simulation and optimization of unconstrained four terminal amorphous silicon/crystalline silicon tandem solar cell

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Abstract

Optoelectronic two dimensional technology computer aided design simulation of unconstrained four terminal hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) tandem solar cells have been carried out. Tandem solar cell approach is one of the promising approaches to achieve high efficiency solar cell by reducing lattice thermalization loss, but needs extensive optimization as the efficiency depends on a number of parameters. The optoelectronic properties of various materials involved have been taken into consideration and a range of parameters such as top anti reflection coating (ARC) thickness, bottom ARC thickness, a-Si:H solar cell thickness, optical connecting layer thickness, a-Si:H solar cell doping, crystalline silicon solar cells doping etc. have been optimized. The optimization resulted in a simulated efficiency of 19.29 % for an untextured planar solar cell.

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Acknowledgments

The authors would like to thank The Director, CSIR-CEERI, Pilani for his motivation and support. This work has been funded under a CSIR network project. The authors would like to acknowledge financial support from CSIR.

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Authors and Affiliations

  1. Sensors and Nanotechnology Group, CSIR-Central Electronics Engineering Research Institute, Pilani, India

    William Taube Navaraj, Beerendra Kumar Yadav & Anil Kumar

  2. Academy of Scientific and Innovative Research (AcSIR), Chennai, India

    William Taube Navaraj & Anil Kumar

  3. Electronics and Nanoscale Engineering Division, College of Science and Engineering, University of Glasgow, Glasgow, UK

    William Taube Navaraj

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  1. William Taube Navaraj
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  2. Beerendra Kumar Yadav
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Correspondence to William Taube Navaraj.

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Navaraj, W.T., Yadav, B.K. & Kumar, A. Optoelectronic simulation and optimization of unconstrained four terminal amorphous silicon/crystalline silicon tandem solar cell. J Comput Electron 15, 287–294 (2016). https://doi.org/10.1007/s10825-015-0767-0

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  • DOI: https://doi.org/10.1007/s10825-015-0767-0

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