Abstract
Landauer–Büttiker shot noise formula only considers the impact of Pauli exclusion principle on noise, but not the impact of Coulomb repulsion among carriers. A theory recently derived by the authors is able to include also the impact of Coulomb repulsion, and provides a computational methodology to obtain noise properties on a more complete physical basis. We review recent results from the application of this methodology with the use of in-house developed computational electronics tools. We show that in a one-dimensional FET, electrostatic repulsion among charge carriers in the channel can be responsible for strongly suppressed or enhanced shot noise with respect to the Poissonian Noise, or to the noise level provided by Landauer–Büttiker formula. This is very relevant for device and circuit design, since current semiconductor technology evolution has brought nanoscale FETs very close to the limit of one-dimensional FETs.
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References
Landauer, R.: Condensed-matter physics: the noise is the signal. Nature 392, 658–659 (1998)
González, T., González, C., Mateos, J., Pardo, D., Reggiani, L., Bulashenko, O.M., Rubi’, J.M.: Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors. Phys. Rev. Lett. 80, 2901–2904 (1998)
Sukhorukov, E.V., Loss, D.: Universality of shot noise in multiterminal diffusive conductors. Phys. Rev. Lett. 80, 4959–4962 (1998)
Blanter, Y.M., Büttiker, M.: Shot-noise current-current correlations in multiterminal diffusive conductors. Phys. Rev. B 56, 2127–2136 (1997)
Steinbach, A.H., Martinis, J.M., Devoret, M.H.: Observation of hot-electron shot noise in a metallic resistor. Phys. Rev. Lett. 76, 3806–3809 (1996)
Schoelkopf, R.J., Burke, P.J., Kozhevnikov, A.A., Prober, D.E., Rooks, M.J.: Frequency dependence of shot noise in a diffusive mesoscopic conductor. Phys. Rev. Lett. 78, 3370–3373 (1997)
Iannaccone, G.: Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors. J. Comput. Electron. 3, 199–202 (2004)
Iannaccone, G., Crupi, F., Neri, B.: Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors. Appl. Phys. Lett. 77, 2876–2878 (2000)
Iannaccone, G., Crupi, F., Neri, B., Lombardo, S.: Theory and experiment of suppressed shot noise in stress-induced leakage currents. IEEE Trans. Electron Dev. 50, 1363–1369 (2003)
Carlo, L.D., Williams, J.R., Zhang, Y., McClure, D.T., Marcus, C.M.: Shot noise in graphene. Phys. Rev. Lett. 100, 156801 (2008)
Herrmann, L.G., Delattre, T., Morfin, P., Berroir, J.M., Placais, B., Glattli, D.C., Kontos, T.: Shot noise in fabry-perot interferometers based on carbon nanotubes. Phys. Rev. Lett. 99, 156804 (2007)
Betti, A., Fiori, G., Iannaccone, G.: Shot noise in quasi one-dimensional FETs. IEDM Technol. Digest 185–188 (2008)
Betti, A., Fiori, G., Iannaccone, G.: Shot noise suppression in quasi one-dimensional field effect transistors. IEEE Trans. Electron Dev. 56, 2137–2143 (2009)
Betti, A., Fiori, G., Iannaccone, G.: Statistical theory of shot noise in quasi-1D field effect transistors in the presence of electron–electron interaction. Phys. Rev. B 81, 035329 (2010)
Iannaccone, G., Lombardi, G., Macucci, M., Pellegrini, B.: Enhanced shot noise in resonant tunneling: theory end experiment. Phys. Rev. Lett. 80, 1054 (1998)
Iannaccone, G., Macucci, M., Pellegrini, B.: Shot noise in resonant-tunneling structures. Phys. Rev. B 55, 4539–4550 (1997)
Pedersen, M.B.M.H., van Langen, S.A., Büttiker, M.: Charge fluctuations in quantum point contacts and chaotic cavities in the presence of transport. Phys. Rev. B 57, 1838 (1998)
Büttiker, A.P.M., Thomas, H., Prêtre, A.: Dynamic conductance and the scattering matrix of small conductors. Phys. Lett. A 180, 364 (1993)
Betti, A., Fiori, G., Iannaccone, G.: Shot noise analysis in quasi one-dimensional field effect transistors. Int. Conf. Noise Fluct. 1129, 581–584 (2009)
Betti, A., Fiori, G., Iannaccone, G.: Enhanced shot noise in carbon nanotube field-effect transistors. Appl. Phys. Lett. 95, 252108 (2009)
Betti, A., Fiori, G., Iannaccone, G.: Enhanced shot noise in carbon nanotube FETs due to electron–hole interaction. IWCE Technol. Dig. 1–4 (2010)
Datta, S.: Electronic Transport in Mesoscopic Systems. Cambridge University Press, Cambridge (1995)
Landauer, R.: Spatial variation of currents and fields due to localized scatterers in metallic conduction. IBM J. Res. Dev. 1, 223 (1957)
Sai, N., Zwolak, M., Vignale, G., Di Ventra, M.: Dynamical corrections to the DFT–LDA electron conductance in nanoscale systems. Phys. Rev. Lett. 94, 186810 (2005)
Vignale, G., Di Ventra, M.: Incompleteness of the Landauer formula for electronic transport. Phys. Rev. B 79, 014201 (2009)
Büttiker, M.: Scattering theory of current and intensity noise correlations in conductors and wave guides. Phys. Rev. B 46, 12485–12507 (1992)
Code and documentation can be found at the url: http://www.nanohub.org/tools/vides
Fiori, G., Iannaccone, G.: Coupled mode space approach for the simulation of realistic carbon nanotube field-effect transistors. IEEE Trans. Nanotechnol. 6, 475 (2007)
Guo, J., Datta, S., Lundstrom, M., Anantam, M.P.: Towards multi-scale modeling of carbon nanotube transistors. Int. J. Multiscale Comput. Eng. 2, 257–276 (2004)
Fiori, G., Iannaccone, G.: Three-dimensional simulation of one-dimensional transport in silicon nanowire transistors. IEEE Trans. Nanotechnol. 6, 524–529 (2007)
Wang, J., Polizzi, E., Lundstrom, M.: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. J. Appl. Phys. 96, 2192–2203 (2004)
Fiori, G., Iannaccone, G., Klimeck, G.: A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry. IEEE Trans. Electron Dev. 53, 1782–1788 (2006)
Park, H.H., Jin, S., Park, Y.J., Min, H.S.: Quantum simulation of noise in silicon nanowire transistors. J. Appl. Phys. 104, 023708 (2008)
Gramespacher, T., Büttiker, M.: Local densities, distribution functions, and wave-function correlations for spatially resolved shot noise at nanocontacts. Phys. Rev. B 60, 2375–2390 (1999)
Büttiker, M.: Flux-sensitive correlations of mutually incoherent quantum channels. Phys. Rev. Lett. 68, 843–846 (1992)
Park, H.H., Jin, S., Park, Y.J., Min, H.S.: Quantum simulation of noise in silicon nanowire transistors with electron–phonon interactions. J. Appl. Phys. 105, 023712 (2009)
van der Ziel, A.: Noise in Solid State Device and Circuits, pp. 75–78. Wiley, New York (1986)
Abidi, A.A.: High-frequency noise measurements on FET’s with small dimensions. IEEE Trans. Electron Dev. 33, 1801–1805 (1986)
Navid, R., Dutton, R.W.: The physical phenomena responsible for excess noise in short-channel MOS devices. IEDM Technol. Dig. 75–78 (2002)
Han, K., Shin, H., Lee, K.: Analytical drain thermal noise current model valid for deep submicron MOSFETs. IEEE Trans. Electron Dev. 51, 261–269 (2004)
Bulashenko, O.M., Rubí, J.M.: Shot-noise suppression by Fermi and Coulomb correlations in ballistic conductors. Phys. Rev. B 64, 045307 (2001)
Martin, T., Landauer, R.: Wave-packet approach to noise in multichannel mesoscopic systems. Phys. Rev. B 45, 1742–1755 (1992)
Döring, M.R., Hangleiter, A., Klötzer, N.: Electron–hole correlation effects in generation–recombination noise. Phys. Rev. B 45, 1163–1171 (1992)
Bardeen, J.: Tunneling from a many-particle point of view. Phys. Rev. Lett. 6, 57–59 (1961)
Iannaccone, G., Pellegrini, B.: Unified approach to electron transport in double-barrier structures. Phys. Rev. B 52, 17406–17412 (1995)
Reittu, H.J.: Fermi’s golden rule and Bardeen’s tunneling theory. Am. J. Phys. 63, 940–944 (1995)
Ahmadi, M.T., Ismail, R., Tan, M.L.P., Arora, V.K.: The ultimate ballistic drift velocity in carbon nanotubes. J. Nanomater. 2008, 769250 (2008)
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Iannaccone, G., Betti, A. & Fiori, G. Suppressed and enhanced shot noise in one dimensional field-effect transistors. J Comput Electron 14, 94–106 (2015). https://doi.org/10.1007/s10825-015-0671-7
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DOI: https://doi.org/10.1007/s10825-015-0671-7