Abstract.
Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-μ-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines.
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Received: 16 January 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002
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ID="**"Present address: Southern Illinois University, Physics, Mailcode 4401, Carbondale, IL 62901, USA
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Appel, G., Ade, H., Guerek, A. et al. Orientation studies of Si-phthalocyanine sulfonic acids cast on SiOx substrates . Appl Phys A 76, 177–182 (2003). https://doi.org/10.1007/s003390201320
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DOI: https://doi.org/10.1007/s003390201320