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High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors

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Abstract

CH3NH3PbI3 perovskite films with full coverage and negligible roughness have been obtained by the two-step sequential thermal evaporation (TSSTE) process, which are further applied to fabricate thin-film transistors (TFTs). To gain the optimal electrical characteristics in our TFTs, the effect of the evaporation amount of PbI2 on the crystallization and thickness of CH3NH3PbI3 films is studied during the process of TSSTE. As a result, we demonstrate a thin-film field-effect transistors possessing a hole field-effect mobility of 3.55 cm2 V− 1 s− 1 as well as on/off ratio greater than 105 with the optimal CH3NH3PbI3 films as the channel layer. Through a further comparative analysis, MoO3 buffer layer is inserted between the perovskite channel layer and the source–drain electrode to improve the contact resistance of TFTs. As an understanding of device mechanism, a fact that insertion of MoO3 buffer layer into the Au/perovskite interface significantly reduced the contact resistance from 705 to 0.2 kΩ cm is unveiled. By inserting MoO3 buffer layer, the hole field-effect mobility of the CH3NH3PbI3 organic–inorganic hybrid TFTs can reach to 7.47 cm2 V− 1 s− 1.

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Acknowledgements

The work reported here was supported by National Natural Science Foundation of China (Project No. 61076006), National Natural Science Foundation of China (Zhang; Project No. 61377031) and the Flat-Panel Display Special Project of China’s 863 Plan (Project No. 2008AA03A335).

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Authors and Affiliations

  1. The Tianjin Key Laboratory for Optical-Electronic Thin Film Devices and Technology, Institute of Photo-Electronics, Nankai University, Tianjin, 300071, China

    Linlin Tang, Yuze Peng, Zhou Zhou, Yuxiang Wu, Jian Xu, Juan Li, Yangyang Du, Like Huang, Hongkun Cai, Jian Ni & Jianjun Zhang

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  1. Linlin Tang
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  2. Yuze Peng
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  3. Zhou Zhou
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  4. Yuxiang Wu
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  6. Juan Li
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  7. Yangyang Du
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  8. Like Huang
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  11. Jianjun Zhang
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Correspondence to Juan Li.

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Tang, L., Peng, Y., Zhou, Z. et al. High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors. Appl. Phys. A 124, 624 (2018). https://doi.org/10.1007/s00339-018-2049-8

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  • DOI: https://doi.org/10.1007/s00339-018-2049-8

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