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Fabrication of GaInPSb quaternary alloy nanowires and its room temperature electrical properties

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Abstract

GaInPSb quaternary alloy nanowires were first synthesized via a simple chemical vapor deposition method. The synthesized nanowires’ length can reach up to 20 μm and diameter ranging from 50 to 100 nm. Raman measurements and high-resolution transmission electron microscopy image illustrate that the as-grown nanowires have a high crystallinity. Room temperature near-infrared photodetector based on as-prepared GaInPSb nanowires was also built for the first time. It shows a good contact with the electrode, and the device has a strong light response to light illumination. This novel near-infrared photodetector may find promising applications in integrated infrared photodetection, information communication, and processing.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51302078, 61501039), the Beijing Natural Science Foundation (2162017), the Initial funding for the Doctoral Program of BIGC (27170116005/039), and the Elite Program of BIGC (27170116004/019).

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    Authors and Affiliations

    1. School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, People’s Republic of China

      Yadan Xu, Liang Ma, Dan Li, Yankun Yang & Qiang Wan

    2. Beijing Institute of Graphic Communication, Beijing, 102600, People’s Republic of China

      Ruping Liu

    3. School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People’s Republic of China

      Guozhang Dai

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    1. Yadan Xu
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    Correspondence to Guozhang Dai or Qiang Wan.

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    Yadan Xu and Ruping Liu contributed equally to this work.

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    Xu, Y., Liu, R., Ma, L. et al. Fabrication of GaInPSb quaternary alloy nanowires and its room temperature electrical properties. Appl. Phys. A 123, 6 (2017). https://doi.org/10.1007/s00339-016-0590-x

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