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Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors

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Abstract

Mg-doped InZnO (MIZO) films were prepared by sol–gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both Ar and oxygen etching can increase the oxygen deficiencies, which effectively increase the content of carrier concentration in MIZO films. After both kinds of plasma treatment, the field effect mobility of the MIZO TFTs is greatly improved and the on/off current ratio increases two orders of magnitude.

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Acknowledgments

This work was supported by National Science Foundation of China (NSFC-6174047), the “Shu Guang” Project from Shanghai Municipal of Education (12SG05) and the Open Project of Shanghai Institute of Ceramics, Chinese Academy of Sciences (KLIFMD-2013-09).

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Authors and Affiliations

  1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, No. 220 Han Dan Road, Shanghai, 200433, People’s Republic of China

    Chun-Feng Hu, Ji-Yu Feng, Jin Zhou & Xin-Ping Qu

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  1. Chun-Feng Hu
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  2. Ji-Yu Feng
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  3. Jin Zhou
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  4. Xin-Ping Qu
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Correspondence to Xin-Ping Qu.

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Hu, CF., Feng, JY., Zhou, J. et al. Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors. Appl. Phys. A 122, 941 (2016). https://doi.org/10.1007/s00339-016-0475-z

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