Abstract
SnO2 nanostructures have been prepared on quartz and porous silicon (PS) substrates using rapid photothermal oxidation at 600 °C and different oxidation times. The analysis and characterizations were researched. The photovoltage properties of Au/n-SnO2/p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The PS is synthesized on single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at current density 25 mA/cm2 for 30 min etching time. The photovoltage properties are found to be depended on laser flounces.
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Acknowledgments
Y. A. would like to acknowledge UniMAP for Grant Nos. 9007-00111 & 9007-00185 and TWAS-Italy, for full support of his visit to JUST-Jordan under TWAS-UNESCO Associateship.
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Abdul Muhsien, M., Salim, E.T., Al-Douri, Y. et al. Synthesis of SnO2 nanostructures employing Nd:YAG laser. Appl. Phys. A 120, 725–730 (2015). https://doi.org/10.1007/s00339-015-9249-2
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DOI: https://doi.org/10.1007/s00339-015-9249-2