Abstract
Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B10C2HX), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I–V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials.
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Acknowledgments
This work was supported by the Defense Threat Reduction Agency (Grant No. HDTRA1-09-1-0060) and the National Aeronautics and Space Administration through Grant 13-EPSCoR-0012. The authors would like to thank Adrien LaVoie for supplying the Si(100) wafers and Shireen Adenwalla for technical assistance and discussion, Gregory S. Engel for the suggestion of pyrazine, A.N. Caruso, for suggestions regarding the signal to noise issues, and George Peterson for the capacitance measurements.
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Elena Echeverría and Robinson James have contributed equally to this work.
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Echeverría, E., James, R., Chiluwal, U. et al. Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias. Appl. Phys. A 118, 113–118 (2015). https://doi.org/10.1007/s00339-014-8778-4
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DOI: https://doi.org/10.1007/s00339-014-8778-4