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Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

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Abstract

Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thin-film transistor (TFT) and one-switch TFT using an oxide semiconducting active channel. A poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] was used as a gate insulator for the memory TFT and the channel conductance of the TFT was modulated by changing the quantity and direction of ferroelectric polarization. The fabrication procedures were designed so that the proposed transparent memristor cell could be implemented at process temperature below 200°C. It was successfully conformed that the fabricated memristor cell exhibited good TFT behaviors and modulated output characteristics programmed into the memory TFT.

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Authors and Affiliations

  1. Convergence Components & Material Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 305-700, Korea

    Sung-Min Yoon, Shinhyuk Yang, Soon-Won Jung, Chun-Won Byun, Min-Ki Ryu, Woo-Seok Cheong, ByeongHoon Kim, HimChan Oh, Sang-Hee Ko Park, Chi-Sun Hwang, Seung-Youl Kang, Ho-Jun Ryu & Byoung-Gon Yu

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  1. Sung-Min Yoon
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  2. Shinhyuk Yang
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Correspondence to Byoung-Gon Yu.

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Yoon, SM., Yang, S., Jung, SW. et al. Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell. Appl. Phys. A 102, 983–990 (2011). https://doi.org/10.1007/s00339-011-6280-9

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  • DOI: https://doi.org/10.1007/s00339-011-6280-9

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