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Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films

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Abstract

The properties of non-linear inorganic chalcogenide photoresists fabricated by co-evaporation of Ag with amorphous arsenic sulfide-selenide materials are considered in detail. The influence of several factors, including Ag concentration, irradiation wavelength and composition of the developer on the photoresists characteristics was studied. Superlinear dissolution characteristics of the photoresists are explained in the frame of the so-called “percolation approach”. The advantages of superlinear photoresists, especially for the case of maskless photolithography, are briefly discussed.

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Authors and Affiliations

  1. Department of Physics, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel

    V. Lyubin, A. Arsh & M. Klebanov

  2. Department of Electro-Optics, Lev Institute-JCT, Jerusalem, 91160, Israel

    M. Manevich, J. Varshal & N. P. Eisenberg

  3. Electro-Optics Division, NRC Soreq, 81800, Yavne, Israel

    R. Dror & B. Sfez

  4. Nanolithography Lab, Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia

    A. V. Latyshev & D. A. Nasimov

Authors
  1. V. Lyubin
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  2. A. Arsh
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  3. M. Klebanov
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  4. M. Manevich
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  5. J. Varshal
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  6. R. Dror
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  7. B. Sfez
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  8. A. V. Latyshev
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  9. D. A. Nasimov
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  10. N. P. Eisenberg
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Corresponding author

Correspondence to M. Manevich.

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Lyubin, V., Arsh, A., Klebanov, M. et al. Non-linear dissolution of amorphous arsenic sulfide-selenide photoresist films. Appl. Phys. A 97, 109–114 (2009). https://doi.org/10.1007/s00339-009-5337-5

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  • DOI: https://doi.org/10.1007/s00339-009-5337-5

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