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Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

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Abstract

Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 50058, Taiwan

    M.-F. Huang, M.-L. Tsai, J.-Y. Shin, Y.-L. Sun, R.-M. Yang & Y.-K. Kuo

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  1. M.-F. Huang
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  2. M.-L. Tsai
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  3. J.-Y. Shin
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  4. Y.-L. Sun
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  5. R.-M. Yang
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  6. Y.-K. Kuo
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Correspondence to M.-F. Huang.

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PACS

42.55.Px; 73.40.-c; 78.20.Bh

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Huang, MF., Tsai, ML., Shin, JY. et al. Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode. Appl. Phys. A 81, 1369–1373 (2005). https://doi.org/10.1007/s00339-005-3258-5

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  • DOI: https://doi.org/10.1007/s00339-005-3258-5

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