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Effect of CMP conditioner diamond shape on pad topography and oxide wafer performances

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Abstract

Chemical mechanical polishing (CMP) performance is often determined by the pad surface texture, which is mainly controlled by using a pad conditioner: usually, a diamond disk comprising numerous diamond grits attached to a flat metal substrate by means of brazing with an alloy. During the conditioning process, the diamonds interact with the pad surface to mainly remove the glazed layer and restore pad asperities. Selection of the appropriate diamond shape is crucial for obtaining the desired pad properties, conditioner life, and wafer removal rate. In this investigation, three different diamond shapes were carefully fabricated: (1) “sharp,” a sharp-edged diamond; (2) “blocky,” a high-quality crystalline diamond; and (3) “mixed,” a combination of sharp and blocky diamonds. Three new disks were fabricated using the above mentioned diamond shapes. Pad surface characterization was carried out to compare the new disks with conventional diamond disks, and the effect of the diamond shape on the wafer removal rate was studied. Oxide CMP tests revealed that the “mixed” diamond grit provided the highest wafer removal rate and the best uniformity. As compared to a conventional diamond disk, it also achieved a higher wafer removal rate and a better uniformity while consuming less pad material. On the other hand, if the dressing stability is the major concern, the use of “blocky” diamond grit is recommended because it provided the most stable wafer removal rate over a conditioning time of up to 20 h. However, if the dressing capability is the major concern, the use of “sharp” diamond grit is suggested because it provided the highest pad cut rate.

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References

  1. Steigerwald JM, Murarka SP, Gutmann RJ (1997) Chemical mechanical planarization of microelectronic materials. Wiley, New York

    Book  Google Scholar 

  2. Liao HT, Shie JR, Yang YK (2008) Application of Taguchi and design of experiments methods in optimization of chemical mechanical polishing process parameters. Int J Adv Manuf Technol 38:674–682

    Article  Google Scholar 

  3. Hooper B-J, Byrne G, Galligan S (2002) Pad conditioning in chemical mechanical polishing. J Mater Process Technol 123:107–113

    Article  Google Scholar 

  4. Achuthan K, Curry J, Lacy M, Campbell D, Babu SV (1996) Investigation of pad deformation and conditioning during the CMP of silicon dioxide films. J Electron Mater 25:10–16

    Article  Google Scholar 

  5. Stein D, Hetherington D, Dugger M, Stout T (1996) Optical interferometry for surface measurements of CMP pads. J Electron Mater 25:1623–1627

    Article  Google Scholar 

  6. Zimmer J, Stubbmann A, (1998) A key factors influencing performance consistency of CMP pad conditioners. Third International CMP-MIC Conference, Santa Clara, USA, February, pp 87–92

  7. Baker R (1997) Conditioning for Removal Rate Stability. Second International CMP-MIC Conference, Santa Clara, USA, February, pp 339–342

  8. Chang SH, Jeng W (1998) Optimization of Pad Conditioning Disk in CMP. Third International CMP-MIC Conference, Santa Clara, USA, February, pp 523–526

  9. Sung J, Pai YL (2000) CMP pad dresser: A diamond grid solution, In Advances in Abrasive Technology III 189–196, Soc. of Grinding Engineers, USA, pp

  10. Garretson CC, Mear ST, Rudd JP, Prabhu G, Osterheld T, Flynn D (2000) New Pad Conditioning Disk Design Delivers Excellent Process Performance While Increasing CMP Productivity. Fifth International CMP-MIC Conference, Santa Clara, USA, February, pp N1–N5

  11. Rikita N, Shimizu A, Kobayashi H (2008) The use of Tagichi to CMP conditioner. International Conference on Planarization/CMP Technology, Taiwan, pp 97–104

    Google Scholar 

  12. Chen K-R, Young H-T (2009) Estimation of dressing effects in chemical mechanical polishing with sorts of diamond dressers. Adv Mater Res 76–78:175–180

    Article  Google Scholar 

  13. Tsai MY, Chen ST, Liao YS, Sung JC (2009) Dressing characteristics of CMP polishing pad using a novel diamond conditioner. Int J Mach Tool Manuf 49:922–729

    Google Scholar 

  14. Yeh HM, Chen KS (2010) Development of a pad conditioning simulation module with a diamond dresser for CMP application. Int J Adv Manuf Technol 50:1–12

    Article  Google Scholar 

  15. Tso PL, Ho SY (2007) Factors influencing the dressing rate of chemical mechanical polishing pad conditioning. Int J Adv Manuf Technol 123:107–113

    Google Scholar 

  16. Tso PL, Hsu R (2007) Estimating chemical mechanical polishing pad wear with compressibility. Int J Adv Manuf Technol 32:682–689

    Article  Google Scholar 

  17. Sung JC, Chen NL, Pai YL, Chou C-S, Chou C-C (2009) The Pad Dressing Phenomena of Multiple Diamond Grits: Implication for The Design of CMP Pad Conditioners. Second International Conference on Planarization/CMP Technology, Japan, Fukuoka, November pp 19–21

  18. Tsai MY, Liao YS (2009) Dressing characteristics of oriented single diamond on CMP polyurethane pad. Mach Sci Technol 13:92–105

    Article  Google Scholar 

  19. Lee H, Joo S, Jeong H (2009) Mechanical effect of colloidal silica in copper chemical mechanical planarization. J Mater Process Technol 209:6134–6139

    Article  Google Scholar 

  20. Lee H, Zhuang Y, Sugiyama M, Seike Y, Takaoka M, Miyachi K, Nishiguchi T (2010) Pad flattening ratio, coefficient of friction and removal rate and analysis during silicon dioxide chemical mechanical planarization. Thin Solid Films 518:1994–2000

    Article  Google Scholar 

  21. Kim H, Jeong H, Lee E, Shin Y (2004) Pad surface characterization and its effect on the tribological state in chemical mechanical polishing. Key Eng Mater 283–388

  22. Stein D, Dugger DM, Stout T (1996) Optical interferometry for surface measurements of CMP pads. J Electron Mater 25:1623–1627

    Article  Google Scholar 

  23. Kawakubo M, Kadomura K, Sugaya T, Hirai O, Tsugane K, Tamada Y (2009) Effect of mechanical and chemical wear of diamond consistency of conditioning, Second International conference on planarization/CMP Technology, Japan, Fukuoka, November pp 313–318

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Authors and Affiliations

  1. Department of Mechanical Engineering, National Chin-Yi University of Technology, No. 35 Lane 215 Chung-Shan Rd. Sec. 1, Taiping City, Taichung County, 411, Taiwan

    Ming Yi Tsai & Wei Kai Chen

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  1. Ming Yi Tsai
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  2. Wei Kai Chen
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Correspondence to Ming Yi Tsai.

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Tsai, M.Y., Chen, W.K. Effect of CMP conditioner diamond shape on pad topography and oxide wafer performances. Int J Adv Manuf Technol 55, 253–262 (2011). https://doi.org/10.1007/s00170-010-3055-y

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  • DOI: https://doi.org/10.1007/s00170-010-3055-y

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