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Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

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Abstract

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching ~200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto ~120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications.

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Authors and Affiliations

  1. Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea

    Seokjae Won, Sang Yeon Lee, Jungyeon Hwang & Hyungtak Seo

  2. Gyeongbuk Science Technology Promotion Center, Gumi Electronics & Information Technology Research Institute, Gumi, 39717, Korea

    Jucheol Park

  3. Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea

    Hyungtak Seo

Authors
  1. Seokjae Won
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  2. Sang Yeon Lee
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  3. Jungyeon Hwang
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  4. Jucheol Park
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  5. Hyungtak Seo
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Correspondence to Hyungtak Seo.

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Won, S., Lee, S.Y., Hwang, J. et al. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx . Electron. Mater. Lett. 14, 14–22 (2018). https://doi.org/10.1007/s13391-017-7134-1

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  • DOI: https://doi.org/10.1007/s13391-017-7134-1

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