Abstract
We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results indicate that both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temperature-dependence of the optical properties. With increasing temperature, excitons are shown to assume a local equilibrium distribution between the localized QD states, whereas the formation of a position-independent Fermi-level is prevented by carrier-loss to the barrier dominating thermally stimulated lateral carrier transfer. The carrier capture rate is found to decrease with increasing temperature and, at room temperature, long escape-limited ground state lifetimes of some 10 ps are estimated. PL spectra excited resonantly in the ground state transition show matching ground state absorption and emission, indicating the intrinsic nature of exciton recombination in the QDs. Finally, the PL excitation spectra are shown to reveal size-selectively the QD absorption, demonstrating the quantum-size effect of the excited state splitting.
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References
For a recent review see: D. Bimberg, M. Grundmann and N.N. Ledentsov, Quantum Dot Heterostructures (London: J. Wiley & Sons, 1999).
D. Leonard, K. Pond and P.M. Petroff, Phys. Rev. B 50, 11687 (1994).
J.M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
Q. Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfonov, A. Konkar and A. Madhukar, J. Cryst. Growth 150, 357 (1995).
N.P. Kobayashi, T.R. Ramachandran, P. Chen and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, U. Richter, S.S. Ruvimov, P. Werner, J. Heydenreich, V.M. Ustinov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov, Electron. Lett. 30, 1416 (1994); D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop’ev and V.M. Ustinov, IEEE Sel. Topics Quant. Electron. 3, 196 (1997).
Q. Xie, A. Kalburge, P. Chen and A. Madhukar, IEEE Photon. Technol. Lett. 8, 965 (1996).
O. Schmidt, N. Kirstaedter, N.N. Ledentsov, M.-H. Mao, D. Bimberg, V.M. Ustinov, A.Y. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev and Z.I. Alferov, Electron. Lett. 32, 1302 (1996).
M. Grundmann and D. Bimberg, Phys. Rev. B 55, 9740(1997); Jpn. J. Appl. Phys. 36, 4181 (1997).
H. Benisty, C.M. Sotomayor Torres and C. Weisbuch, Phys. Rev. B 44, 10945 (1991).
G. Wang, S. Fafard, D. Leonard, J.E. Bowers, J.L. Merz and P.M. Petroff, Appl. Phys. Lett. 64, 2815 (1994).
W. Yang, R.R. Lowe-Webb, H. Lee and P.C. Sercel, Phys. Rev. B 56, 13314 (1997).
K. Mukai, N. Ohtsuka and M. Sugawara, Appl. Phys. Lett. 70, 2416 (1997).
F. Adler, M. Geiger, A. Bauknecht, D. Haase, P. Ernst, A. Dörnen, F. Scholz and H. Schweizer, J. Appl. Phys. 83, 1631 (1998).
Z.Y. Xu, Z.D. Lu, X.P. Yang, Z.L. Yuan, B.Z. Zheng, J.Z. Xu, W.K. Ge, Y. Wang, J. Wang and L.L. Chang, Phys. Rev. B 54, 11528 (1996).
D.I. Lubyshev, P.P. Gonzales-Borrero, E. Marega, E. Petitprez, N. La Scala and P. Basmaji, Appl. Phys. Lett. 68, 205 (1996).
M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann and J. Feldmann, phys. status solidi (b) 203, 121 (1997).
R. Heitz, M. Veit, N.N. Ledentsov, A. Hoffmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev and Zh.I. Alferov, Phys. Rev. B 56, 10435 (1997).
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar and D. Bimberg, Phys. Rev. B 57, 9050 (1998).
N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A. Yu. Egorov, M.V. Maximov, P.S. Kop’ev, and Zh.I. Alferov, Proc. 22nd Intl. Conf. on the Physics of Semiconductors, Vancouver, Canada, 1994 ed. D.J. Lockwood, Vol. 3, (Singapore: World Scientific, 1995), p. 1855.
M.J. Steer, D.J. Mowbray, W.R. Tribe, M.S. Skolnick, M.D. Sturge, M. Hopkinson, A.G. Cullis, C.R. Whitehouse and R. Murray, Phys. Rev. B 54, 17738 (1997).
I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen and A. Madhukar, Appl. Phys. Lett. 73, 1341 (1998).
R. Heitz, I. Mukhametzhanov, P. Chen and A. Madhukar, Phys. Rev. B 58, R10151 (1998).
O. Stier, M. Grundmann and D. Bimberg, to be published in Phys. Rev. B 59, 5688 (1999).
M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A. Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, and Zh.I. Alferov, Phys. Rev. Lett. 74, 4043 (1995).
K. Ota, N. Usami and Y. Shiraki, Phys. E 2, 573 (1998).
Y.P. Varshni, Phys. 34, 149 (1967).
D. Bimberg, M. Sondergeld and E. Grobe, Phys. Rev. B 4, 3451 (1971).
W. Yang, R.R. Lowe-Webb, H. Lee and P.C. Sercel, Phys. Rev. B 56, 13314 (1997).
B. Ohnesorge, M. Albrecht, J. Oshinowo, A. Forchel and Y. Arakawa, Phys. Rev. B 54, 11532 (1996).
R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar and D. Bimberg, to be published.
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Heitz, R., Mukhametzhanov, I., Madhukar, A. et al. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots. J. Electron. Mater. 28, 520–527 (1999). https://doi.org/10.1007/s11664-999-0105-z
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DOI: https://doi.org/10.1007/s11664-999-0105-z