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Colossal magnetoresistance in Sol-Gel derived epitaxial thin film of Co-doped La1−xCaxMnOx

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Abstract

Electrical, magnetic, and magnetotransport properties of sol-gel derived epitaxial thin films of Co-doped La1−xCaxMnO3 are reported. The epitaxial thin films, deposited using metal-salt routed sol-gel processing, show excellent quality of epitaxy (FWHM=0.3°). Their surface roughness is about 30Å and average grain size is 500Å. The thin films exhibit the typical behavior of colossal magnetoresistive oxide, manifesting paramagnetic semiconductor to ferromagnetic metal transition near magnetic transition. The doping of Co reduces electrical conductivity, Curie temperature (Tc) and saturation magnetization (Ms). However, the peak magnetoresistance ratio does not show a monotonous change with increasing Co content. These results are interpreted by spin-disorder scattering, magnetic inhomogeneity, and lattice distortion.

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Author notes

  1. Seung-Young Bae

    Present address: Division of Ceramics, Korea Institute of Science and Technology, 131-159, Seoul, Korea

Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, 94305-2205, Stanford, CA

    Seung-Young Bae & Shan Xiang Wang

  2. Department of Applied Physics, Stanford University, 94305, Stanford, CA

    D. Jefferey Snyder

  3. Solid State Laboratory, Department of Electrical Engineering, Stanford University, 94305-4055, CA

    Shan Xiang Wang

Authors
  1. Seung-Young Bae
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  2. D. Jefferey Snyder
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  3. Shan Xiang Wang
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Bae, SY., Snyder, D.J. & Wang, S.X. Colossal magnetoresistance in Sol-Gel derived epitaxial thin film of Co-doped La1−xCaxMnOx . J. Electron. Mater. 27, 1–8 (1998). https://doi.org/10.1007/s11664-998-0328-4

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  • DOI: https://doi.org/10.1007/s11664-998-0328-4

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