Skip to main content
SpringerLink
Log in

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

  • Special Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Self-assembled InAs islands were grown by metalorganic vapor phase epitaxy on InP(001) and characterized by atomic force microscopy and transmission electron microscopy. The growth temperature (450–600°C), the InAs deposition time (3–12 s, using a growth rate of ∼2.3Å/s), and the growth interruption time (8–240 s) were varied systematically in order to investigate the effect of thermodynamic and kinetic factors on the structural properties of InAs/InP and InP/InAs/InP structures. It is found that the structural properties of islands vary widely with the growth conditions, ranging from very small (4–5 nm height, ∼30–60 nm in diameter) coherent islands at low temperature (450–500°C) to large (∼350 nm wide) plastically relaxed islands at high temperature (600°C). For a given deposition time, the height of the coherent islands increases markedly with the growth temperature while their diameter shows only a moderate increase. The growth interruption time also affects the formation and the evolution of islands, which clearly shows that these processes are kinetically limited. Coherent islands with structural properties suitable for use in optoelectronic devices are obtained from ∼2.4–4.8 monolayer thick InAs layers using a growth temperature of 500°C and a 30 s interruption time.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C.W. Snyder, B.G. Orr, D. Kessler and L.M. Sander, Phys. Rev. Lett. 66 (23), 3032 (1991).

    Article  CAS  Google Scholar 

  2. R. Hull and A. Fisher-Colbrie, Appl. Phys. Lett. 50 (13), 851 (1987).

    Article  CAS  Google Scholar 

  3. D.J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64 (16), 1943 (1990).

    Article  CAS  Google Scholar 

  4. S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57 (20), 2110 (1990).

    Article  CAS  Google Scholar 

  5. D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. DenBaars and P. Petroff, Appl. Phys. Lett. 63 (23), 3203 (1993).

    Article  CAS  Google Scholar 

  6. S.P. DenBaars, C.M. Reaves, V. Bressler-Hill, S. Varma, W.H. Weinberg and P.M. Petroff, J. Cryst. Growth 145, 721 (1994).

    Article  CAS  Google Scholar 

  7. Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures, ed. E.D. Jones, A. Mascarenhas, and P.M. Petroff, (Pittsburgh, PA: Materials Research Society, 1996).

    Google Scholar 

  8. R. Nötzel, Semicond. Sci. Technol. 11 (10), 1365 (1996).

    Article  Google Scholar 

  9. Y. Chen and J. Washburn, Phys. Rev. Lett. 77 (19), 4046 (1996) and references therein.

    Article  CAS  Google Scholar 

  10. J. Temmyo, E. Kuramochi, M. Sugo, T. Nishiya, R. Nötzel and T. Tamamura, Electron. Lett. 31 (3), 209 (1995).

    Article  CAS  Google Scholar 

  11. D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Hao, V.M. Ustinov, A. Yu. Zhukov, P.S. Kop’ev, Zh. I. Alferov, S.S. Ruvimov, U. Gösele and J. Heydenreich, Jpn. J. Appl. Phys. 35 pt. 1, (2B) 1311 (1996).

    Article  CAS  Google Scholar 

  12. H. Saito, Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokoyama, and H. Ishikawa, Jpn. J. Appl. Phys. 35 pt. 2 (7B), L903 (1996).

  13. H. Saito, K. Nishi, I. Ogura, S. Sugou and Y. Sugimoto, Appl. Phys. Lett. 69 (21), 3140 (1996).

    Article  CAS  Google Scholar 

  14. G.S. Solomon, M.C. Larson and J.S. Harris, Jr., Appl. Phys. Lett. 69 (13), 1897 (1996).

    Article  CAS  Google Scholar 

  15. J.C. Ferrer, F. Peiró, A. Cornet, J.R. Morante, T. Uztmeier, G. Armelles and F. Briones, Appl. Phys. Lett. 69 (25), 3887 (1996).

    Article  CAS  Google Scholar 

  16. S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond and S. Charbonneau, Appl. Phys. Lett. 68 (7), 991 (1996).

    Article  CAS  Google Scholar 

  17. A. Ponchet, A. Le Corre, H. L’Haridon, B. Lambert and S. Salaün, Appl. Phys. Lett. 67 (13), 1850 (1995).

    Article  CAS  Google Scholar 

  18. A. Ponchet, A. Le Corre and R. Carles, Solid-State Electron. 40 (1/8), 615 (1996).

    Article  CAS  Google Scholar 

  19. Z. Sobiesierski, D.I. Westwood, P.J. Parbrook, K.B. Ozanyan, M. Hopkinson and C.R. Whitehouse, Appl. Phys. Lett. 70 (11), 1423 (1997) and references therein.

    Article  CAS  Google Scholar 

  20. H. Temkin, D.G. Gershoni, S.N.G. Chu, J.M. Vandenberg, R.A. Hamm and M.B. Panish, Appl. Phys. Lett. 55 (16), 1668 (1989).

    Article  CAS  Google Scholar 

  21. D.R. Storch, R.P. Schneider, Jr. and B.W. Wessels, J. Appl. Phys. 72 (7), 3041 (1992).

    Article  CAS  Google Scholar 

  22. R. Houdré, J.F. Carlin, A. Rudra, J. Ling and M. Ilegems, Superlattices Microstruct. 13 (1), 67 (1993).

    Article  Google Scholar 

  23. H. Banvillet, E. Gil, R. Cadoret, P. Disseix, K. Ferdjani, A. Vasson, A.M. Vasson, A. Tabata, T. Benyattou and G. Guillot, J. Appl. Phys. 70 (3), 1638 (1991).

    Article  CAS  Google Scholar 

  24. M. Gendry, V. Drouot, C. Santinelli, G. Hollinger, C. Miossi and M. Pitaval, J. Vac. Sci. Technol. B 10 (4), 1829 (1992).

    Article  CAS  Google Scholar 

  25. R.P. Schneider, Jr. and B.W. Wessels, Appl. Phys. Lett. 57 (19), 1998 (1990).

    Article  CAS  Google Scholar 

  26. J.F. Carlin, R. Houdré, A. Rudra and M. Ilegems, Appl. Phys. Lett. 59 (23), 3018 (1991).

    Article  CAS  Google Scholar 

  27. H. Marchand, M.Sc.A. Dissertation, École Polytechnique de Montréal (1996).

  28. H. Marchand, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R.Y.-F. Yip and R.A. Masut, Appl. Phys. Lett. 71 (4), 527 (1997).

    Article  CAS  Google Scholar 

  29. P. Cova, R.A. Masut, J.F. Currie, A. Bensaada, R. Leonelli and C.A. Tran, Can. J. Phys. 69, 412 (1991).

    CAS  Google Scholar 

  30. C.A. Tran, J.T. Graham, J.L. Brebner and R.A. Masut, J. Electron. Mater. 23 (12), 1291 (1994).

    CAS  Google Scholar 

  31. Rs was determined using an image analysis software by measuring the surface area lying above a grey-level threshold similar to the level used for measuring the island diameters.

  32. J. Drucker, Phys. Rev. B 48 (24), 18203 (1993).

    Article  CAS  Google Scholar 

  33. C.W. Snyder, J.F. Mansfield and B.G. Orr, Phys. Rev. B 46 (15), 9551 (1992).

    Article  CAS  Google Scholar 

  34. Y. Androussi, P. François, A. Lefebvre, C. Priester, I. Lefebvre, G. Allan, M. Lannoo, J.M. Moison, N. Lebouche and F. Barthes, Mater. Res. Soc. Symp. Proc. 355, (Pittsburgh, PA: Mater. Res. Soc., 1995), p. 569.

    Google Scholar 

  35. P. Chen, Q. Xie, A. Madhukar, L. Chen and A. Konkar, J. Vac. Sci. Technol. B 12 (4), 2568 (1994).

    Article  CAS  Google Scholar 

  36. N. Carlsson, K. Georgsson, L. Montelius, L. Samuelson, W. Seifert and R. Wallenberg, J. Cryst. Growth 156, 23 (1995).

    Article  CAS  Google Scholar 

  37. D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett. 71 (11), 378 (1993); A.G. Cullis, A.J. Pidduck, and M.T. Emeny, J. Cryst. Growth 158, 15 (1996); P. Desjardins, H. Marchand, L. Isnard and R.A. Masut, J. Appl. Phys., 81 (8), 3501 (1997).

    Article  Google Scholar 

  38. The possibility that roughening can begin during the deposition of the last few monolayers of the InAs layer cannot be ruled out but does not modify the substance of the argument.

  39. H. Marchand et al., unpublished.

  40. C. Priester and M. Lannoo, Phys. Rev. Lett. 75 (1), 93 (1995).

    Article  CAS  Google Scholar 

Download references

Author information

Author notes

  1. H. Marchand

    Present address: Department of Electrical and Computer Engineering, University of California, 93106, Santa Barbara, CA

  2. P. Desjardins

    Present address: Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, 61801, Urbana, IL

Authors and Affiliations

  1. Groupe de Recherche en Physique et Technologie des Couches Minces (GCM) Départment de Génie Physique, Ecole Polytechnique de Montréal, Succursale “Centre-Ville”, C.P. 6079, H3C 3A7, Montréal, Québec, Canada

    H. Marchand, P. Desjardins, S. Guillon, J. -E. Paultre, Z. Bougrioua, R. Y. -F. Yip & R. A. Masut

Authors
  1. H. Marchand
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Desjardins
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Guillon
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. -E. Paultre
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Z. Bougrioua
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. Y. -F. Yip
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. R. A. Masut
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Marchand, H., Desjardins, P., Guillon, S. et al. Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001). J. Electron. Mater. 26, 1205–1213 (1997). https://doi.org/10.1007/s11664-997-0021-z

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-997-0021-z

Key words

Search

Navigation