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Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

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Abstract

We employ a simple two-step growth technique to grow large-area 1550-nm laser structures by direct hetero-epitaxy of III–V compounds on patterned exact-oriented (001) silicon (Si) substrates by metal organic chemical vapor deposition. Densely-packed, highly uniform, flat and millimeter-long indium phosphide (InP) nanowires were grown from Si v-grooves separated by silicon dioxide (SiO2) stripes with various widths and pitches. Following removal of the SiO2 patterns, the InP nanowires were coalesced and, subsequently, 1550-nm laser structures were grown in a single overgrowth without performing any polishing for planarization. X-ray diffraction, photoluminescence, atomic force microscopy and transmission electron microscopy analyses were used to characterize the epitaxial material. PIN diodes were fabricated and diode-rectifying behavior was observed.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, 93106, USA

    Ludovico Megalini, Hongwei Zhao, Douglas C. Oakley, John E. Bowers & Jonathan Klamkin

  2. Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA

    Brian C. Cabinian & John E. Bowers

Authors
  1. Ludovico Megalini
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  2. Brian C. Cabinian
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  3. Hongwei Zhao
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  4. Douglas C. Oakley
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  5. John E. Bowers
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  6. Jonathan Klamkin
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Correspondence to Ludovico Megalini.

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Megalini, L., Cabinian, B.C., Zhao, H. et al. Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition. J. Electron. Mater. 47, 982–987 (2018). https://doi.org/10.1007/s11664-017-5887-9

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  • DOI: https://doi.org/10.1007/s11664-017-5887-9

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