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Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device

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Abstract

Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnSx have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnSx and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300°C to 400°C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.

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Authors and Affiliations

  1. Engineering Science and Department, The Pennsylvania State University, University Park, PA, 16802, USA

    J. R. Nasr & M. W. Horn

  2. Materials Science and Engineering Department, The Pennsylvania State University, University Park, PA, 16802, USA

    J. J. Cordell, R. L. Gurunathan, J. R. S. Brownson & M. W. Horn

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  1. J. R. Nasr
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  2. J. J. Cordell
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  3. R. L. Gurunathan
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  4. J. R. S. Brownson
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  5. M. W. Horn
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Correspondence to J. R. Nasr.

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Nasr, J.R., Cordell, J.J., Gurunathan, R.L. et al. Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device. J. Electron. Mater. 46, 1215–1222 (2017). https://doi.org/10.1007/s11664-016-5096-y

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  • DOI: https://doi.org/10.1007/s11664-016-5096-y

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