Skip to main content
SpringerLink
Log in

Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO2/YSZ (YSZ: yttria-stabilized ZrO2) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (M s) is higher than 230 emu/cm3 with a coercivity (H c) smaller than 30Oe, which is suitable to be used in high-frequency devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Waqas, X.L. Huang, J. Ding, H.M. Fan, Y.W. Ma, T.S. Herng, A.H. Quresh, J.Q. Wei, D.S. Xue, and J.B. Yi, Appl. Phys. 107, 09A514 (2010).

    Article  Google Scholar 

  2. C.H. Dong, G.X. Wang, D.W. Guo, C.J. Jiang, and D.S. Xue, Nanoscale Res. Lett. 8, 196 (2013).

    Article  Google Scholar 

  3. W.W. Wu, J.C. Cai, X.H. Wu, Y.N. Li, and S. LIAO, Rare Met. 30, 621 (2011).

    Article  Google Scholar 

  4. F. Claeyssen, N. Lhermet, R.L. Letty, and P. Bouchilloux, J.␣Alloy. Compd. 258, 61 (1997).

    Article  Google Scholar 

  5. A.K.M. AktherHossain, S.T. Mahmud, M. Seki, T. Kawai, and H. Tabata, J. Magn. Magn. Mater. 312, 210 (2007).

    Article  Google Scholar 

  6. D. Ravinder, K. Vijay Kumar, and A.V. Ramana Reddy, Mater. Lett. 57, 4162 (2003).

    Article  Google Scholar 

  7. Q.H. Yang, H.W. Zhang, Q.Y. Wen, Y.L. Liu, and J.Q. Xiao, J. Appl. Phys. 105, 07A507 (2009).

    Google Scholar 

  8. E. Htoh, J. Sato, Y. Murakami, A. Takahashi, and R. Nakatani, JPCS 191, 012027 (2009).

    Google Scholar 

  9. Y.Q. Yang, L. Zheng, H. Zheng, and X.F. Yan, Adv. Mater. Res. 756, 21 (2012).

    Google Scholar 

  10. X.W. Xi, Y.J. Chen, and X.Y. Zhan, Vacuum 75, 161 (2004).

    Article  Google Scholar 

  11. D.W. Guo, X.L. Fan, G.Z. Chai, C.J. Jiang, X.L. Li, and D.S. Xue, Appl. Surf. Sci. 256, 2319 (2010).

    Article  Google Scholar 

  12. K. Praveena, K. Sadhana, and S.R. Murthy, J. Alloy. Compd. 492, 245 (2010).

    Article  Google Scholar 

  13. Robert Eason, Pulsed Laser Deposition of Thin Films: Applications-Led Growth of Functional Materials (New Jersey: Wiley-Interscience, 2006), pp. 4–9.

    Book  Google Scholar 

  14. E. Popova and N. Keller, J. Appl. Phys. 90, 1422 (2001).

    Article  Google Scholar 

  15. D.W. Guo, Z.M. Zhang, M. Lin, X.L. Fan, G.Z. Chai, Y. Xu, and D.S. Xue, J. Phys. D Appl. Phys. 42, 125006 (2009).

    Article  Google Scholar 

  16. F.W. Oliver, D. Seifu, and E. Hoffman, Appl. Phys. Lett. 75, 2993 (1999).

    Article  Google Scholar 

  17. X. Landreau, B. Lanfant, and T. Merle, Eur. Phys. J. D 66, 160 (2012).

    Article  Google Scholar 

  18. R.E. van de Leest and F. Roozeboom, Appl. Surf. Sci. 187, 68 (2002).

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the Nature Science Foundations of Zhejiang Province of China (Grant No. LQ12E02001), the Research Fund for International Young Scientists of NSFC (No. 61250110544), the Foundation of Zhejiang Educational Committee of China (Grant No. Y201017252), Project Supported by the Nonprofit technology Research program of Zhejiang Province (No. 2013C31064), Natural Science Foundation of China (Nos. 61271039, 51302056).

Author information

Authors and Affiliations

  1. Institute of Electron Device and Application Hangzhou Dianzi University, Hangzhou, 310018, China

    Y. W. Qian, J. X. Deng, P. Zheng, L. Zheng & H. B. Qin

  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China

    H. Zheng

Authors
  1. Y. W. Qian
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. X. Deng
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. B. Qin
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J. X. Deng.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Qian, Y.W., Deng, J.X., Zheng, H. et al. Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate. J. Electron. Mater. 43, 4289–4293 (2014). https://doi.org/10.1007/s11664-014-3364-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3364-2

Keywords

Search

Navigation