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Optimization of Annealing Process for Improved InGaN Solar Cell Performance

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Abstract

We report enhanced performance of InGaN solar cells grown by metalorganic chemical vapor deposition through optimization of the annealing of the epitaxial wafer before device fabrication. We varied the annealing environment gas mixtures as well as temperatures to obtain the optimized annealing condition. It was found that the major improvement of the nitride solar cell efficiency after annealing is in the increase of the V oc. In addition, annealing at the reasonably moderate temperature of 550°C in O2 environment results in the highest-efficiency InGaN solar cell devices compared with devices annealed at different temperatures and in different gas environments.

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Authors and Affiliations

  1. U.S. Army Research Laboratory, RDRL-SEE-M, 2800 Powder Mill Rd., Adelphi, MD, 20783, USA

    N.C. Das, M.L. Reed, A.V. Sampath, H. Shen & M. Wraback

  2. Materials Department, University of California, Santa Barbara, CA, 93106, USA

    R.M. Farrell, M. Iza, S.C. Cruz, J.R. Lang, N.G. Young, Y. Terao, S. Nakamura, S.P. DenBaars & J.S. Speck

  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA

    C. J. Neufeld, S. Keller, S. Nakamura, S.P. DenBaars & U.K. Mishra

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  1. N.C. Das
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  2. M.L. Reed
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  3. A.V. Sampath
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  4. H. Shen
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  5. M. Wraback
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  7. M. Iza
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  10. N.G. Young
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  11. Y. Terao
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  15. S.P. DenBaars
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Correspondence to N.C. Das.

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Das, N., Reed, M., Sampath, A. et al. Optimization of Annealing Process for Improved InGaN Solar Cell Performance. J. Electron. Mater. 42, 3467–3470 (2013). https://doi.org/10.1007/s11664-013-2794-6

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  • DOI: https://doi.org/10.1007/s11664-013-2794-6

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