Skip to main content
SpringerLink
Log in

Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Thermoelectric materials with high figure of merit, which requires large Seebeck coefficient, large electrical conductivity, and low thermal conductivity, are of great importance in solid-state cooling and power generation. Solid-solution formation is one effective method to achieve low thermal conductivity by phonon scattering due to mass and strain field fluctuations. This type of scattering is maximized in structures containing vacancies. The thermoelectric properties of Ga2Te3-GaSb vacancy compounds were studied in this work. We find that the lattice thermal conductivity is reduced by over an order of magnitude with the addition of only very moderate amounts of Ga2Te3. Additionally, both the carrier type and concentration can be modified. While the vacancy structure induced by Ga2Te3 addition to GaSb can effectively reduce phonon conductivity, carrier mobility is also degraded, and optimized thermoelectric properties require careful control of the vacancy content in these solid solutions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H.J. Goldsmid, Applications of Thermoelectricity (London: Methuen, 1960).

    Google Scholar 

  2. Y.Z. Pei and D.T. Morelli, Appl. Phys. Lett. 94, 122112 (2009).

    Article  Google Scholar 

  3. J. Callaway and H.C. Vonbaeyer, Phys. Rev. 120, 1149 (1960).

    Article  CAS  Google Scholar 

  4. D.M. Rowe, CRC Handbook of Thermoelectrics (Boca Raton: CRC, 1995).

    Book  Google Scholar 

  5. K. Kurosaki, Appl. Phys. Lett. 93, 012101 (2008).

    Article  Google Scholar 

  6. C.E. Kim, Phys. Stat. Sol. 3, 221 (2009).

    CAS  Google Scholar 

  7. J.C. Woolley and K.W. Blazey, J. Electrochem. Soc. 111, 951 (1964).

    Article  CAS  Google Scholar 

  8. A.A. Abdurakh and M.I. Aliev, Phys. Stat. Sol. 17, 375 (1966).

    Article  Google Scholar 

  9. A.A. Abdurakh and M.I. Aliev, Phys. Stat. Sol. 20, 777 (1967).

    Article  Google Scholar 

  10. S.K. Patapis, J. Phys. Chem. Sol. 44, 851 (1983).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA

    Hao Yang & Donald T. Morelli

Authors
  1. Hao Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Donald T. Morelli
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Hao Yang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yang, H., Morelli, D.T. Improved Thermoelectric Properties in Ga2Te3-GaSb Vacancy Compounds. J. Electron. Mater. 41, 1720–1724 (2012). https://doi.org/10.1007/s11664-012-2052-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-012-2052-3

Keywords

Search

Navigation