Abstract
We report the thermoelectric properties of Mn-doped Cu2Mn x Sn1−x Se3 compound, with x ranging from 0.005 to 0.1 at temperature ranging from 80 K to 723 K. All samples maintain cubic zincblende-like structure, and no impurity phase was detected. The electrical resistivity decreases rapidly when Mn4+ replaces Sn2+ in the matrix. The excess Mn impurities in the x = 0.05 and x = 0.1 samples also affect the Seebeck coefficient. The total thermal conductivity is increased for Mn-doped samples except for the x = 0.005 sample. In all, both power factor and figure of merit are improved by Mn doping over the entire temperature range. The ZT value of the x = 0.02 sample reaches 0.035 at 300 K, and for x = 0.01 reaches 0.41 at 716 K, which are comparable to the best thermoelectric performance for ternary Cu-based compounds.
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Lu, X., Morelli, D.T. Thermoelectric Properties of Mn-Doped Cu2SnSe3 . J. Electron. Mater. 41, 1554–1558 (2012). https://doi.org/10.1007/s11664-011-1873-9
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DOI: https://doi.org/10.1007/s11664-011-1873-9