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Nanostructured Interfaces for Thermoelectrics

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Abstract

Temperature drops at the interfaces between thermoelectric materials and the heat source and sink reduce the overall efficiency of thermoelectric systems. Nanostructured interfaces based on vertically aligned carbon nanotubes (CNTs) promise the combination of mechanical compliance and high thermal conductance required for thermoelectric modules, which are subjected to severe thermomechanical stresses. This work discusses the property require- ments for thermoelectric interface materials, reviews relevant data available in the literature for CNT films, and characterizes the thermal properties of vertically aligned multiwalled CNTs grown on a candidate thermoelectric material. Nanosecond thermoreflectance thermometry provides thermal property data for 1.5-μm-thick CNT films on SiGe. The thermal interface resistances between the CNT film and surrounding materials are the dominant barriers to thermal transport, ranging from 1.4 m2 K MW−1 to 4.3 m2 K MW−1. The volumetric heat capacity of the CNT film is estimated to be 87 kJ m−3 K−1, which corresponds to a volumetric fill fraction of 9%. The effect of 100 thermal cycles from 30°C to 200°C is also studied. These data provide the groundwork for future studies of thermoelectric materials in contact with CNT films serving as both a thermal and electrical interface.

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Abbreviations

c p :

Heat capacity, J kg−1 K−1

C v :

Volumetric heat capacity, J m−3 K−1

D :

Bond line thickness, μm

f eff :

Effective fill fraction of CNT film, %

G :

Shear modulus, GPa

k :

Thermal conductivity, W m−1 K−1

L :

Joint length, m

R :

Thermal resistivity, m K W−1

R′′:

Thermal resistance, m2 K W−1

ΔT :

Temperature excursion, K

α :

Thermal expansion coefficient, 10−6 K−1

ρ :

Density of CNT, kg m−3

σ :

Maximum shear stress, GPa

1:

Thermal expansion coefficient of layer 1

2:

Thermal expansion coefficient of layer 2

CNT-Pt:

Boundary between CNT film and Pt metal layer

CNT-Sub:

Boundary between CNT film and substrate

eff:

Effective

ind:

Individual

tot:

Total

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Acknowledgements

This research was funded in part by Bosch LLC, the Precourt Energy Efficiency Center, and the National Science Foundation. Special thanks go to Ali Shakouri’s group at UC Santa Cruz for the SiGe substrates and Molecular Nanosystems Inc. for their CNT fabrication support.

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Authors and Affiliations

  1. Mechanical Engineering Department, Stanford University, Stanford, CA, 94305, USA

    Y. Gao, A. M. Marconnet, M. A. Panzer, S. LeBlanc & K. E. Goodson

  2. Stanford Nanofabrication Facility, Stanford, CA, 94305, USA

    S. Dogbe

  3. Baskin School of Engineering, University of California at Santa Cruz, Santa Cruz, CA, 95064, USA

    Y. Ezzahri & A. Shakouri

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  1. Y. Gao
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Correspondence to Y. Gao.

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Gao, Y., Marconnet, A.M., Panzer, M.A. et al. Nanostructured Interfaces for Thermoelectrics. J. Electron. Mater. 39, 1456–1462 (2010). https://doi.org/10.1007/s11664-010-1256-7

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