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Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb

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We report the formation of CdTe self-assembled quantum dots (QDs) on high-quality ZnTe epilayers grown on a GaSb substrate by molecular-beam epitaxy. Reflection high-energy electron diffraction and atomic force micro- scopy measurements clearly show the formation of CdTe QDs. Photoluminescence (PL) measurements on ZnTe-capped CdTe QD samples show a wide distribution of dot size. The temperature dependence of PL spectra indicates much stronger exciton localization in QDs than that in quantum wells.

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Acknowledgements

This work was supported by the National Science Foundation under Grant DMR06-03752 and by the Science Foundation of Arizona under Contract No. SRG 0190-07.

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Authors and Affiliations

  1. Department of Physics, University of Notre Dame, Notre Dame, IN, 46556, USA

    R. E. Pimpinella, X. Liu, J. K. Furdyna & M. Dobrowolska

  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA

    A. M. Mintairov & J. L. Merz

Authors
  1. R. E. Pimpinella
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  2. X. Liu
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  3. J. K. Furdyna
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  4. M. Dobrowolska
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  5. A. M. Mintairov
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  6. J. L. Merz
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Correspondence to R. E. Pimpinella.

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Pimpinella, R.E., Liu, X., Furdyna, J.K. et al. Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb. J. Electron. Mater. 39, 992–995 (2010). https://doi.org/10.1007/s11664-010-1107-6

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  • DOI: https://doi.org/10.1007/s11664-010-1107-6

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