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Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

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Abstract

Silicon dioxide (SiO2), silicon nitride (Si x N y ), and zinc sulfide (ZnS) with ammonium sulfide [(NH4)2S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ∼10 μm. SiO2 did not show significant improvement and the zero-bias resistance-area product (R 0 A) was 0.72 Ω-cm2 at 77 K. Si x N y passivation showed a nominal improvement with an R 0 A value of 4.1 Ω-cm2 at 77 K. ZnS with (NH4)2S treatment outperformed others significantly, improving the R 0 A value to 492 Ω-cm2 at 77 K. Variable-area diode measurements indicated a bulk-limited R 0 A value of 722 Ω-cm2. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.

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Authors and Affiliations

  1. Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street, Chicago, IL, 60607, USA

    Koushik Banerjee & Siddhartha Ghosh

  2. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, IL, 60440, USA

    Shubhrangshu Mallick

  3. Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710, Albuquerque, NM, 87106, USA

    Elena Plis & Sanjay Krishna

Authors
  1. Koushik Banerjee
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  2. Siddhartha Ghosh
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  3. Shubhrangshu Mallick
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  4. Elena Plis
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  5. Sanjay Krishna
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Correspondence to Koushik Banerjee.

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Banerjee, K., Ghosh, S., Mallick, S. et al. Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes. J. Electron. Mater. 38, 1944–1947 (2009). https://doi.org/10.1007/s11664-009-0850-z

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  • DOI: https://doi.org/10.1007/s11664-009-0850-z

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