ZnTe was grown on GaAs(211)B by molecular beam epitaxy (MBE). Structural properties and strain relaxation at the ZnTe/GaAs(211)B interface were investigated by high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). Application of digital image processing involving a filtered inverse fast Fourier transformation revealed an array of misfit dislocations at the interface and allowed strain relaxation to be estimated. Only one twin defect was observed in the HRTEM images, and details of this twin defect were investigated by STEM.
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ACKNOWLEDGEMENTS
This work was partially supported by the Au/AI/Ni/Ti Metal Formation and Thermal Imaging System Display program, subcontracted by EPIR Technologies, Inc., president Dr. Sivalingam Sivananthan, Contract No. IRD-06-UIC0001. We acknowledge the␣use of the electron microscopy facilities in the Research Resource Center East at the University of Illinois at Chicago.
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Wang, X.J., Hou, Y.B., Chang, Y. et al. Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy. J. Electron. Mater. 38, 1776–1780 (2009). https://doi.org/10.1007/s11664-009-0826-z
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DOI: https://doi.org/10.1007/s11664-009-0826-z