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Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al2O3 Integration

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Abstract

This work presents vertical flash memory devices with protein-assembled PbSe nanocrystals as a floating gate and Al2O3 as a control oxide. The advantage of a vertical structure is that it improves cell density. Protein assembly improves uniformity of nanocrystals, which reduces threshold voltage variation among devices. The introduction of Al2O3 as a control oxide provided lower voltage/faster operation and hence less power consumption compared with the devices fabricated with SiO2. The integration of Al2O3 appeared to be compatible with the protein assembly approach. In conclusion, Al2O3 has the potential to become the high-k control oxide due to its relatively high electron/hole barrier heights, and high permittivity.

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References

  1. K.W. Guarini, C.T. Black, Y. Zhang, I.V. Babich, E.M. Sikorski, and L.M. Gignac, IEEE Int. Electron Dev. Meeting Tech. Dig., 22.2.1 (2003).

  2. S. Tang, C. Mao, Y. Liu, D. Q. Kelly, S. K. Banerjee, IEEE T Electron Dev 54, 433 (2007). dio:10.1109/TED.2006.890234.

    Article  ADS  CAS  Google Scholar 

  3. I. Yamashita, Thin Solid Films 393, 12 (2001). doi:10.1016/S0040-6090(01)01083-5.

    Article  ADS  CAS  Google Scholar 

  4. J. Sarkar (Ph.D. dissertation, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 2007).

  5. Y.Y. Chen, C. H. Chien, and J. C. Lou, Jpn J Appl Phy 1 44, 1704 (2005).

    Article  ADS  CAS  Google Scholar 

  6. C. Sargentis, K. Giannakopoulos, A. Travlos, D. Tsamakis, Surf Sci 601, 2859 (2007). doi:10.1016/j.susc.2006.11.064.

    Article  ADS  CAS  Google Scholar 

  7. G. Molas, M. Bocquet, J. Buckley, J.P. Colona, L. Masarotto, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, P. Brianceau, L. Vermande, P. Scheiblin, M. Gely, A.M. Papon, G. Auvert, L. Perniola, C. Licitra, T. Veyron, N. Rochat, C. Bongiorno, S. Lombardo, B. De Salvo, and S. Deleonibus, IEEE Int. Electron Dev. Meeting Tech. Dig., 453 (2007).

  8. E. Woodard, 23rd Annual Microelectronic Engineering Conference, 2005, p. 52.

  9. C. M. Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita, IEEE T Electron Dev 52, 2473 (2005). doi:10.1109/TED.2005.857938.

    Article  ADS  Google Scholar 

  10. C·K. Maiti, S·K. Samanta, S. Chatterjee, G.K. Dalapati, L.K. Bera, Solid state Electron 48, 1369 (2004). doi:10.1016/j.sse.2004.02.014.

    Article  ADS  CAS  Google Scholar 

  11. P·F. Lee, X.B. Lu, J.Y. Dai, H.L. W. Chan, E. Jelenkovic E, K.Y. Tong, Nanotechnology 17, 1202 (2006). doi:10.1088/0957-4484/17/5/006.

    Article  ADS  CAS  Google Scholar 

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Correspondence to F. Ferdousi.

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Ferdousi, F., Sarkar, J., Tang, S. et al. Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al2O3 Integration. J. Electron. Mater. 38, 438–442 (2009). https://doi.org/10.1007/s11664-008-0645-7

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  • DOI: https://doi.org/10.1007/s11664-008-0645-7

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