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Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition

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ZnO nanotips are grown on epitaxial GaN/c-sapphire templates by metalorganic chemical vapor deposition. X-ray diffraction (XRD) studies indicate that the epitaxial relationship between ZnO nanotips and the GaN layer is (0002)ZnO||(0002)GaN and (101̄0)ZnO||(101̄0)GaN. Temperature-dependent photoluminescence (PL) spectra have been measured. Sharp free exciton and donor-bound exciton peaks are observed at 4.4 K with photon energies of 3.380 eV, 3.369 eV, and 3.364 eV, confirming high optical quality of ZnO nanotips. Free exciton emission dominates at temperatures above 50 K. The thermal dissociation of these bound excitons forms free excitons and neutral donors. The thermal activation energies of the bound excitons at 3.369 eV and 3.364 eV are 11 meV and 16 meV, respectively. Temperature-dependent free A exciton peak emission is fitted to the Varshni’s equation to study the variation of energy bandgap versus temperature.

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Acknowledgements

This work has been supported by the National Science Foundation under Grant Nos. CCR-0103096 and ECS-0088549 and the AFSOR under Grant No. F49620-03-1-0292.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, 08854, USA

    J. Zhong, G. Saraf, H. Chen & Y. Lu

  2. Bell Laboratories, Lucent Technologies, Murray Hill, NJ, 07974, USA

    Hock M. Ng & T. Siegrist

  3. Veeco TurboDisc, Somerset, NJ, 08873, USA

    A. Parekh, D. Lee & E. A. Armour

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  1. J. Zhong
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  2. G. Saraf
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Correspondence to Y. Lu.

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Zhong, J., Saraf, G., Chen, H. et al. Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition. J. Electron. Mater. 36, 654–658 (2007). https://doi.org/10.1007/s11664-007-0130-8

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  • DOI: https://doi.org/10.1007/s11664-007-0130-8

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