Abstract
We have studied the defect levels in as grown and post growth processed cadmium telluride (CdTe) using thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) techniques. We have extracted the thermal energy (Eth) and trapping cross section (σth) for the defect levels using the initial rise and variable heating rate methods. We have identified 10 different defect levels in the crystals. Thermal ionization energy values obtained experimentally were compared to theoretical values of the transition-energy levels of intrinsic and extrinsic defects and defect complexes in CdTe determined by first-principles band-structure calculations. On the basis of this comparison, we have associated the observed ionization levels with various native defects and impurity complexes.
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Soundararajan, R., Lynn, K.G., Awadallah, S. et al. Study of defect levels in CdTe using thermoelectric effect spectroscopy. J. Electron. Mater. 35, 1333–1340 (2006). https://doi.org/10.1007/s11664-006-0264-0
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DOI: https://doi.org/10.1007/s11664-006-0264-0