Abstract
Multiple-stacked InP self-assembled quantum dots (SAQD or QD) were grown on an In0.5Al0.3Ga0.2P matrix lattice-matched on a GaAs (001) substrate using metalorganic chemical vapor deposition. Cathodoluminescence (CL) scanning electron microscopy, and transmission electron microscopy were employed to characterize the optical, morphological, and structural properties of the grown QDs. We found that the CL line width broadens and the surface becomes rough with an increase in the number of stacked QD layers in the structure. However, by introducing thin tensile-strained Al0.6Ga0.4P layers in the middle of In0.5Al0.3Ga0.2P spacer layers to compensate the compressive strain of the InP QD layers, the CL and morphology are significantly improved. Using this technique, 30-stacked InP/In0.5Al0.3Ga0.2P QD structures with improved CL properties and surface morphology were realized.
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Zhang, X.B., Ryou, J.H., Dupuis, R.D. et al. Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots. J. Electron. Mater. 35, 701–704 (2006). https://doi.org/10.1007/s11664-006-0124-y
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DOI: https://doi.org/10.1007/s11664-006-0124-y