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Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes

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Abstract

Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 × 109 cm−2, corresponding to 10 years in low-earth orbit. The proton damage causes a decrease in forward breakdown voltage and a flat-band voltage shift in the capacitance-voltage characteristics, indicating a change in fixed oxide charge and damage to the dielectric. The interface state densities after irradiation increased from 5.9 × 1011 cm−2 to 1.03 × 1012 cm−2 in Sc2O3/GaN diodes and from 2.33 × 1011 to 5.3 × 1011 cm−2 in Sc2O3/MgO/GaN diodes. Postannealing at 400°C in forming gas recovered most of the original characteristics but did increase the interfacial roughness.

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Acknowledgements

The work at UF is partially supported by ARO DAAD19-01-1-0603, ARL, AFOSR (F49620-02-1-0366 and F49620-03-1-0370), and NSF CTS-0301178 (DMR 0400416, Dr. L. Hess). The work at Prairie View A&M is supported by NASA Grant No. NCC9-114.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    K.K. Allums, M. Hlad, A.P. Gerger, B.P. Gila, C.R. Abernathy & S.J. Pearton

  2. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    F. Ren

  3. Center for Applied Radiation Research, Prairie View A&M University, Prairie View, TX, 77446, USA

    R. Dwivedi, T.N. Fogarty & R. Wilkins

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  1. K.K. Allums
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  2. M. Hlad
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  5. C.R. Abernathy
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  7. F. Ren
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  10. R. Wilkins
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Correspondence to K.K. Allums.

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Allums, K., Hlad, M., Gerger, A. et al. Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes. J. Electron. Mater. 36, 519–523 (2007). https://doi.org/10.1007/s11664-006-0035-y

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  • DOI: https://doi.org/10.1007/s11664-006-0035-y

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