Skip to main content
SpringerLink
Log in

Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors

  • Special Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

    We’re sorry, something doesn't seem to be working properly.

    Please try refreshing the page. If that doesn't work, please contact support so we can address the problem.

Abstract

Patterned silicon-on-insulator (SOI) substrates have been proposed to grow low defect density CdTe. The CdTe epilayers so obtained will enable the growth of good-quality mercury cadmium telluride (HgCdTe) layers subsequently. This would increase the scope for better performance of infrared detectors fabricated on the HgCdTe epilayers. A background of our previous work on metal organic chemical vapor deposition (MOCVD) of GaN on nanopatterned alternative silicon substrates has been presented. Residual stress measurements were made on the GaN epilayers by spatially resolved Raman spectroscopy, which shows reduced strain in the epilayer growth on the patterned substrates. A theoretical approach of strain in planar substrates, compliant substrates, and patterned compliant substrates is presented with detailed plots.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. O.K. Wu, R.D. Rajavel, and J.E. Jensen, Mater. Chem. Phys. 43, 103 (1996).

    Article  CAS  Google Scholar 

  2. D.J. Wallis, N.D. Browning, and S. Sivananthan, Appl. Phys. Lett. 70, 3113 (1997).

    Article  CAS  Google Scholar 

  3. R. Sporken, M.D. Lange, C. Masset, and J.P. Faurie, Appl. Phys. Lett. 55, 1879 (1989).

    Article  CAS  Google Scholar 

  4. H. Figgemeier, M. Bruder, K.M. Mahlein, R. Wollrab, and J. Ziegler, J. Electron. Mater. 32, 588 (2003).

    CAS  Google Scholar 

  5. D. Zubia and S.D. Hersee, J. Appl. Phys. 85, 6492 (1999).

    Article  CAS  Google Scholar 

  6. D. Zubia, S.H. Zaidi, S.R.J. Brueck, and S.D. Hersee, Appl. Phys. Lett. 76, 858 (2000).

    Article  CAS  Google Scholar 

  7. X. Sun, R. Bommena, D. Burckel, M. Wraback, S.R.J. Brueck, and S.D. Hersee, J. Appl. Phys. 95, Feb (2004).

  8. S.D. Hersee, D. Zubia, R. Bommena, X. Sun, M. Fairchild, S. Zhang, D. Burckel, A. Frauenglass, and S.R.J. Brueck, J. Quantum Electron. 38, 1017 (2002).

    Article  CAS  Google Scholar 

  9. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, J. Appl. Phys. 77, 4389 (2005).

    Article  Google Scholar 

  10. K. Karch, J.M. Wagner, and F. Bechstedt, Phy. Rev. B 57, 7043 (1998).

    Article  CAS  Google Scholar 

  11. W. Reiger, T. Metzger, H. Angerer, R. Dimitriov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett 68, 970 (1996).

    Article  Google Scholar 

  12. E.A. Fitzgerald, J. Vac. Sci. Technol. B 7 (1989).

  13. S. Guha, A. Madhukar, and Li. Chen, Appl. Phys. Lett. 56 (1990).

  14. R. Sporken, D. Grajewski, Y. Xin, F. Wiame, G. Brill, P. Boieriu, A. Prociuk, S. Rujirawat, N. Dhar, and S. Sivananthan, J. Electron. Mater. 29, 760 (2000).

    CAS  Google Scholar 

  15. R. Zhang and I. Bhat, J. Electron. Mater. 29, 6 (2000).

    CAS  Google Scholar 

  16. Y.H. Lo, Appl. Phys. Lett. 59, 2311 (1991).

    Article  CAS  Google Scholar 

  17. W.A. Jesser, J.H. van der Merwe, and P.M. Stoop, J. Appl. Phys. 85, 2129 (1999).

    Article  CAS  Google Scholar 

  18. D. Maroudas, L.A. Zepeda-Ruiz, and W.H. Weinberg, Appl. Phys. Lett. 73, 753 (1998).

    Article  CAS  Google Scholar 

  19. H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, and T.S. Duffy, Appl. Phys. Lett. 82, 3853 (2003).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical & Computer Engineering, University of Illinois at Chicago, USA

    R. Bommena

  2. Department of Physics, University of Illinois at Chicago, 60607-7059, Chicago, IL

    C. Fulk, Jun Zhao, T. S. Lee & S. Sivananthan

  3. Center for High Technology Materials, University of New Mexico, 87106, Albuquerque, NM

    S. R. J. Brueck & S. D. Hersee

Authors
  1. R. Bommena
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. Fulk
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jun Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. S. Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. Sivananthan
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. R. J. Brueck
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. S. D. Hersee
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bommena, R., Fulk, C., Zhao, J. et al. Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors. J. Electron. Mater. 34, 704–709 (2005). https://doi.org/10.1007/s11664-005-0007-7

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-005-0007-7

Key words

Search

Navigation