Abstract
In this paper, a novel GaN/AlGaN/GaN high electron mobility transistor (HEMT) is discussed. The device uses a thick GaN-cap layer (∼250 nm) to reduce the effect of surface potential fluctuations on device performance. Devices without Si3N4 passivation showed no dispersion with 200-ns-pulse-width gate-lag measurements. Saturated output-power density of 3.4 W/mm and peak power-added efficiency (PAE) of 32% at 10 GHz (VDS=+15 V) were achieved from unpassivated devices on sapphire substrates. Large gate-leakage current and low breakdown voltage prevented higher drain-bias operation and are currently under investigation.
Similar content being viewed by others
References
U.K. Mishra, P. Parikh, and Y.-F. Wu, Proc. IEEE 90, 1022 (2002).
S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R.L. Henry, IEEE Trans. Electron Dev. 48, 465 (2001).
R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra, IEEE Trans. Electron Dev. 48, 560 (2001).
B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman, IEEE Electron Dev. Lett. 21, 268 (2000).
R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Shen, and U.K. Mishra, IEEE Electron Dev. Lett. 23, 588 (2002).
A. Jimenez et al., IEEE Electron Dev. Lett. 23, 306 (2002).
M.B. Das, Proc. IEEE 113, 1565 (1966).
S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra, Appl. Phys. Lett. 81, 439 (2002).
P. Smorchkova et al., J. Appl. Phys. 90, 5196 (2001).
L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I.P. Smorchkova, S. Keller, S.P. DenBaars, and U.K. Mishra, IEEE Electron Dev. Lett. 22, 457 (2001).
D. Buttari et al., IEEE Electron Dev. Lett. 23, 118 (2002).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Shen, L., Coffie, R., Buttari, D. et al. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design. J. Electron. Mater. 33, 422–425 (2004). https://doi.org/10.1007/s11664-004-0195-6
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-004-0195-6