Abstract
Zinc oxide (ZnO) possesses many interesting properties, such as a wide energy bandgap, large photoconductivity, and high excitonic binding energy. Chemical-vapor-deposition-grown ZnO films generally show n-type conductivity. A compensation doping process is needed to achieve piezoelectric ZnO, which is needed for surface acoustic wave (SAW), bulk acoustic wave, and micro-electromechanical system devices. In this work, a gas-phase diffusion process is developed to achieve piezoelectric (11\(\bar 2\)0) ZnO films. Comparative x-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements confirmed that high crystal quality and good surface morphology were preserved after diffusion. Photoluminescence (PL) measurements show a broad band emission with a peak wavelength at ∼580 nm, which is associated with Li doping. The SAW, including both Rayleigh-wave and Love-wave modes, is achieved along different directions in piezoelectric (11\(\bar 2\)0) ZnO films grown on an r-plane sapphire substrate.
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References
D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
H. Sheng, S. Muthukumar, N.W. Emanetoglu, and Y. Lu, Appl. Phys. Lett. 80, 2132 (2002).
B.J. Coppa, R.F. Davis, and R.J. Nemanich, Appl. Phys. Lett. 82, 400 (2003).
D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 83, 63 (2003).
A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998).
T. Minami, H. Nanto, and S. Takata, Jpn. J. Appl. Phys. 23, L280 (1984).
J. Hu and R.G. Gordon, Sol. Cells 30, 437 (1991).
S. Fujihara, C. Sasaki, and T. Kimura, Key Eng. Mater. 181, 109 (2000).
M. Joseph, H. Tabata, and T. Kawai, Appl. Phys. Lett. 74, 2534 (1999).
G.A. Mohamed, E.-M. Mohamed, and A. Abu El-Fadl, Physica B 308, 949 (2001).
C.R. Gorla, N.W. Emanetoglu, S. Liang, W.E. Mayo, Y. Lu, M. Wraback, and H. Shen, J. Appl. Phys. 85, 2595 (1999).
E.G. Bylander, J. Appl. Phys. 49, 1188 (1978).
K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.A. Voiget, Appl. Phys. Lett. 68, 403 (1996).
B. Lin, Z. Fu, and Y. Zai, Appl. Phys. Lett. 79, 943 (2001).
J.C. Ronfard-Haret and J. Kossanyi, Chem. Phys. 241, 339 (1999).
A. Ortiz, C. Falcony, J. Hernandez, M. Garcia, and J.C. Alonso, Thin Solid Films 293, 103 (1997).
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Wu, P., Zhong, J., Emanetoglu, N.W. et al. Li diffusion in epitaxial (11\(\bar 2\)0) ZnO thin films. J. Electron. Mater. 33, 596–599 (2004). https://doi.org/10.1007/s11664-004-0052-7
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DOI: https://doi.org/10.1007/s11664-004-0052-7