Abstract
The deformation behavior of the epitaxial TiN/MgO (001) thin film/substrate system was studied through in-situ nanoindentation in a transmission electron microscope (TEM). The required sample geometry was prepared using Ga+ focused ion beam (FIB) etching. During room-temperature indentation, both the TiN film and the MgO substrate deformed through the motion of dislocations. The result was a localized hemispherical plastic zone in the TiN film directly under the indentation contact area, forming an 8° tilt boundary. These results show directly that small-scale plasticity in TiN can occur at room temperature through the motion of dislocations.
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Minor, A.M., Stach, E.A., Morris, J.W. et al. In-situ nanoindentation of epitaxial TiN/MgO (001) in a transmission electron microscope. J. Electron. Mater. 32, 1023–1027 (2003). https://doi.org/10.1007/s11664-003-0084-4
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DOI: https://doi.org/10.1007/s11664-003-0084-4