Abstract
In1−xMnxAs diluted magnetic semiconductor (DMS) thin films with x 0.14 have been grown using organometallic vapor phase epitaxy. Tricarbonyl-(methylcyclopentadienyl)manganese was successfully used as the Mn source. Single phase, epitaxial films were achieved for compositions as high as x=0.14 using growth temperatures ≥475°C. For lower growth temperatures or x>0.14, nanometer scale MnAs precipitates were observed within the In1−xMnxAs matrix. Transport properties were investigated using the Hall effect. All Mn doped films were p-type with single phase films exhibiting hole concentrations 2≤×1019 cm−3. Magnetization was measured as a function of temperature and applied field for a single phase film with x=0.1. Ferromagnetic ordering was observed at 5 K with a saturation magnetization of Ms=68 emu/cm3, a remnant magnetization, Mr=10 emu/cm3, and a coercive field Hc=400 Oe.
Similar content being viewed by others
References
G.A. Prinz, Sci. 282, 1660 (1998).
H. Ohno, Sci. 281, 951 (1998).
H. Ohno, H. Munekata, S. von Molnar, and L.L. Chang, J. Appl. Phys. 69, 6103 (1991).
H. Munekata, T. Penney, and L.L. Chang, Surf. Sci. 267, 342 (1992).
H. Ohno, F. Matsukura, T. Omiya, and N. Akiba, J. Appl. Phys. 85, 4277 (1999).
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Sci. 287, 1019 (2000).
T. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. Klar, and W. Heimbrodt, Thin Solid Films 364, 209 (2000).
L.Q. Qian and B.W. Wessels, Appl. Phys. Lett. 63, 628 (1993).
K. Huang and B.W. Wessels, Appl. Phys. Lett. 52, 1155 (1988).
JCPDS reference card no. 28-0644.
H. Munekata, H. Ohno, S. von Molnar, A. Segmuller, L.L. Chang, and L. Esaki, Phys. Rev. Lett. 63, 1849 (1989).
C. Kittel, Intro. to Solid State Phys. (New York: John Wiley & Sons, 1996).
S. von Molnar, H. Munekata, H. Ohno, and L. Chang, J. Magn. Magn. Mater. 93, 356 (1991).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Blattner, A.J., Lensch, J. & Wessels, B.W. Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor. J. Electron. Mater. 30, 1408–1411 (2001). https://doi.org/10.1007/s11664-001-0192-y
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-001-0192-y