Abstract
Using a specially-designed spectrometer enabling combined reflectance anisotropy spectroscopy (RAS) and reflectance measurements on rotating substrates in a commercial MOVPE reactor, we report the first full-spectroscopic RAS-monitoring of (Al,Ga)InP-based 650 nm laser growth. First, a spectral database was built up from systematic studies of AlGaInP RAS signatures for different Al compositions, doping levels and growth temperatures. These data are subsequently used for the interpretation of characteristic RAS fingerprints taken throughout the entire laser growth process. From the analysis of characteristic changes in the RAS spectra even small deviations from the optimum process (doping levels, composition, etc.) which would effect the performance of the final device can be detected.
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Haberland, K., Bhattacharya, A., Zorn, M. et al. MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy. J. Electron. Mater. 29, 94–98 (2000). https://doi.org/10.1007/s11664-000-0102-8
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DOI: https://doi.org/10.1007/s11664-000-0102-8