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Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics

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Abstract

This paper provides a review of the inelastic electron tunneling spectroscopy (IETS), a powerful technique for characterizing both the structural and electrical properties of ultra-thin gate dielectrics in MOS devices. The principle of operation of IETS will be described, and examples will be shown to illustrate the wealth of information that can be revealed by IETS, including phonons, bonding vibration modes, impurity bonds, and traps, which is difficult to accurately characterize on the same sample by other techniques.

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  1. Department of Electrical Engineering, Yale University, New Haven, CT, 06520, USA

    T. P. Ma

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  1. T. P. Ma
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Correspondence to T. P. Ma.

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Ma, T.P. Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics. Sci. China Inf. Sci. 54, 980–989 (2011). https://doi.org/10.1007/s11432-011-4228-5

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  • DOI: https://doi.org/10.1007/s11432-011-4228-5

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