Abstract
One-dimensional silver telluride nanowires (NWs) as potential thermoelectric materials have been studied extensively. At present, most of the efforts are focused on p-type silver telluride, while limited works have been achieved on the preparation of n-type silver telluride. Herein, we prepared n-type Te/Ag2Te NWs by galvanic exchange reaction and fabricated a nanofilm. As a simple and cost-effective method, galvanic exchange reaction was employed to prepare n-type Te/Ag2Te NWs with obtained Seebeck coefficient of − 93.98 μV K−1. The nanostructure and chemical composition as well as structural phase transition of as-prepared n-type Te/Ag2Te NWs were characterized and discussed. Besides, the thermoelectric thin film device consisting of n-type Te/Ag2Te nanofilms and p-type Ag-doped Te nanofilms obtained by one-step hydrothermal method was assembled and exhibited accessible output voltage as 65 mV at the 75 K temperature difference, which may provide the fundament for the development of inorganic thermoelectric nanofilm device.
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This work was supported by the National Natural Science Foundation of China (51762018, 51572117, and 51863009).
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Wang, W., Liu, J., Li, X. et al. Galvanic exchange reaction involving Te nanowires and Ag ions for n-type Te/Ag2Te thermoelectric nanofilms. J Nanopart Res 21, 131 (2019). https://doi.org/10.1007/s11051-019-4536-z
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DOI: https://doi.org/10.1007/s11051-019-4536-z