The effects and feasibility of metal site doping of the tetragonal diamagnetic insulator FeGa3 by Fe/Co, Fe/Mn, and Co/Ni substitutions were investigated by the X-ray electron-probe microanalysis, electrical resistivity, specific heat, and magnetic susceptibility measurements. The substitution of Co for Fe in FeGa3 does not change its structural type and preserves the structure of the binary parent compound ( FeGa3), whereas the solubility of Mn in the FeGa3 -type structure is limited to 3 at.% and a finite solubility of Ni in CoGa3 is not detected.
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This work was supported by the Ukrainian–Austrian WTZ project No. UA-5/2011.
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Published in Fizyko-Khimichna Mekhanika Materialiv, Vol. 49, No. 2, pp. 69–75, March–April, 2013.
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Kotur, B., Babizhetskyy, V., Bauer, E. et al. Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor. Mater Sci 49, 211–219 (2013). https://doi.org/10.1007/s11003-013-9601-7
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DOI: https://doi.org/10.1007/s11003-013-9601-7