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Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs

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Abstract

We have measured the ionization performance of a CDMS II detector using CNRS/LPN HEMTs as opposed to Si JFETs in the front end electronics. We find no significant difference in ionization resolution when using HEMTs compared to Si JFETs indicating the CNRS/LPN HEMTs can act as a low power, low noise replacement for Si JFETs in cryogenic applications. We present the HEMT DC/AC properties, measured noise in both low impedance and high impedance closed-loop configurations using CDMS electronics, and performance with a CDMS detector exposed to a \(^{241}\)Am source.

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Acknowledgments

This work was supported in part by the Department of Energy and the National Science Foundation.

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Authors and Affiliations

  1. Department of Physics, University of California, Berkeley, CA, 94720, USA

    A. Phipps & B. Sadoulet

  2. Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 , Marcoussis, France

    Y. Jin

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  1. A. Phipps
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  2. Y. Jin
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  3. B. Sadoulet
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Correspondence to A. Phipps.

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Phipps, A., Jin, Y. & Sadoulet, B. Ionization Readout of CDMS Detectors with Low Power, Low Noise HEMTs. J Low Temp Phys 176, 470–475 (2014). https://doi.org/10.1007/s10909-013-1062-8

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  • DOI: https://doi.org/10.1007/s10909-013-1062-8

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