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Polyferrocenylsilanes as Protective Charge Migration Coatings for Dielectrics

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ABSTRACT

Polyferrocenylsilanes [Fe(η-C5H4)2SiMePh] n (3) and [Fe(η-C5H4)2SiMe2] n (4) were prepared by transition metal-catalyzed ring-opening polymerization (ROP) and thin films of these materials were studied to investigate their potential utility as protective charge migration coatings for dielectrics. Films ( \(>\)15 μm) of 3 or 4 cast from a concentrated toluene solution coated on Mylar did not experience any arc discharging when exposed to a beam of low energy (20 keV) electrons for a 1 h time period. In order to further investigate the charge migration properties of polyferrocenylsilanes, thick shapes and films of 3 were prepared by mold-extrusion and solution-casting onto a Teflon substrate, respectively. Charge accumulation measurements on 3 using a nonintrusive electrostatic probe showed that even after a 1 h exposure to a 25 keV electron flux, no appreciable charge accumulation existed. The direction of current flow was explored by constructing a device consisting of a film (thickness ca. 100–130 μm) of polymer 3 coating a layer of copper. When positioned beneath a circular mask and exposed to a low energy electron flux (5–25 keV), measurements of the current at the surface of the polymer film either exposed to or not exposed to the electron flux were not significantly different, and the current recorded from the bare copper connection to the ground was significantly (100–1000 times) higher. Although the mechanism of charge migration in polyferrocenylsilanes is not fully understood, these experiments indicated it may arise from a conduction mechanism, however electron scattering may also be involved.

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Acknowledgments

This research was supported by the Centre for Research in Earth and Space Technology (CRESTech) and Materials Manufacturing Ontario (MMO). A. B-S. is grateful to the Ontario Government for a graduate scholarship (2004–2005) and A. Be. and R.R. are grateful to NSERC for postgraduate scholarships. In addition, I.M. is grateful to NSERC for an E.W.R. Steacie Fellowship (1997–1999), the University of Toronto for a McLean Fellowship (1997–2003), the Ontario Government for a PREA award (1999), and the Canadian Government for a Canada Research Chair (2001–2008) for the duration of the work described.

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Authors and Affiliations

  1. Department of Chemistry and Center for Nanostructured Inorganic and Polymeric Materials, University of Toronto, 80 St. George Street, Toronto, Ontario, M5S 3H6, Canada

    Alexandra Bartole-Scott, Andrea Berenbaum, Rui Resendes & Ian Manners

  2. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario, M5S 3G4, Canada

    Gerald Dubois & Keith G. Balmain

Authors
  1. Alexandra Bartole-Scott
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  2. Andrea Berenbaum
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  3. Rui Resendes
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  4. Ian Manners
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  5. Gerald Dubois
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  6. Keith G. Balmain
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Correspondence to Ian Manners.

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Dedicated to Professor Richard J. Puddephatt in recognition of his outstanding and scholarly contributions to chemistry.

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Bartole-Scott, A., Berenbaum, A., Resendes, R. et al. Polyferrocenylsilanes as Protective Charge Migration Coatings for Dielectrics. J Inorg Organomet Polym 15, 485–495 (2005). https://doi.org/10.1007/s10904-006-9003-5

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