Abstract
In this paper, the maximum thickness of crack-free yttrium-iron-garnet ferrite film was increased from 7 to 13 µm by layer by layer growth method. Also, the effect of a layer by layer growth method on films morphology, crystal structure and magnetic properties were investigated. X-ray diffraction θ–2θ revealed the orientation of crystal structure could be increased by the layer-by-layer growth method. Scanning electron microscopy and stylus profiler measurement showed the roughness and morphology of film surface were improved efficiently after using the layer-by-layer growth method. Magnetic hysteresis loops and FMR spectrum representing this layer-by-layer growth method could efficiently increase film magnetism and decrease FMR linewidth. Consequently, this innovative method of layer-by-layer growth efficiently provides a pathway to prepare excellent properties, tens of micron-thick, crack-free yttrium iron garnet films and creates unique significance in the electronics industry.
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Acknowledgements
This work is funded by Natural Science Foundation of Zhejiang Province of China (Grant Nos. LQ17A040002 and LY17F010021), the Key R&D Program of Zhejiang Province of China (No. 2017C01004), National Natural Science Foundation of China (Nos. 51702075, 11704092), the Nonprofit technology Research program of Zhejiang Province (No. 2017C31019).
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Zheng, H., Zheng, P., Wu, Q. et al. Tens of micron-thick, crack-free yttrium iron garnet films on a Gd3Ga5O12 substrate based on the layer by layer growth method. J Mater Sci: Mater Electron 29, 11790–11794 (2018). https://doi.org/10.1007/s10854-018-9278-7
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DOI: https://doi.org/10.1007/s10854-018-9278-7